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부품번호 | WPM1488 기능 |
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기능 | P-Channel MOSFET | ||
제조업체 | Will Semiconductor | ||
로고 | |||
WPM1488
Single P-Channel, -12V, -1.4A, Power MOSFET
VDS (V)
-12
Typical Rds(on) (Ω)
0.080@ VGS=–4.5V
0.086@ VGS=–3.6V
0.105@ VGS=–2.5V
ID (A)
-1.2
-1.0
-1.0
Descriptions
The WPM1488 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced
trench technology and design to provide excellent
RDS (ON) with low gate charge. This device is
suitable for use in DC-DC conversion, power
switch and charging circuit. Standard Product
WPM1488 is Pb-free.
WPM1488
www.sh-willsemi.com
SOT-323
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC
current
Extremely Low Threshold Voltage
Small package SOT-323
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
14 = Specific Device Code
* = Date Code
Marking
Order information
Device
Package
Shipping
WPM1488-3/TR SOT-323 3000/Reel&Tape
Will Semiconductor Ltd.
1
May,2014 - Rev.1.0
Typical Characteristics (Ta=25oC, unless otherwise noted)
20 10
V =-1.5V
GS
V =-5V
DS
15
VGS=-1.8V
VGS=-2.0V
8 T=25°C
VGS=-2.5V
VGS=-3.0V
T=125°C
6 T=-50°C
10 VGS=-4.5V
4
5
2
WPM1488
1234
-VDS-Drain to Source Voltage(V)
Output characteristics
0
5 0.0 0.5 1.0 1.5 2.0 2.5
-VGS-Gate to Source Voltage(V)
Transfer characteristics
0.30
0.25
0.20
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
0.30
0.25
0.20
ID=-1.2 A
0.15 0.15
0.10 0.10
0.05 0.05
0.00
0
2468
-I -Drain-to-Source Current(A)
DS
On-Resistance vs. Drain current
10
1.4
1.3 VGS=-4.5V
I =-1.2A
D
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Temperature(°C)
On-Resistance vs. Junction temperature
0.00
1
234
-VGS-Gate to Source Voltage(V)
5
On-Resistance vs. Gate-to-Source voltage
1.2 ID=-250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25 0
25 50 75 100 125
Temperature (oC)
Threshold voltage vs. Temperature
150
Will Semiconductor Ltd.
4
May,2014 - Rev.1.0
4페이지 Package outline dimensions
SOT-323
WPM1488
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP.
1.200
1.400
0.525 REF.
0.260
0.460
0° 8°
Dimensions In Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP.
0.047
0.055
0.021 REF.
0.010
0.018
0° 8°
Will Semiconductor Ltd.
7
May,2014 - Rev.1.0
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ WPM1488.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WPM1480 | P-Channel MOSFET | Will Semiconductor |
WPM1481 | Single P-Channel Power MOSFET | WillSEMI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |