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PDF WPM4803 Data sheet ( Hoja de datos )
| Número de pieza | WPM4803 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM4803 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM4803
P-Channel Enhancement Mode MOSFET
Description
The WPM4803 is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
Features
z-30V/-5A,RDS(ON)= 36mȍ@VGS=- 10V
z-30V/-4A,RDS(ON)= 53\m\\ȍ@VGS=- 4.5V
zSuper high density cell design for extremely low
RDS (ON)
zExceptional on-resistance and maximum DC
current capability
zSOP – 8P package design
Application
zPower Management in Note book
zPortable Equipment
zBattery Powered System
zDC/DC Converter
zLoad Switch
zDSC
zLCD Display inverter
Order information
3DUW1XPEHU
WPM4803-8/TR
3DUW1XPEHU
SOP-8P
WPM4803
www.willsemi.com
PIN CONNECTIONS
S1 1
G1
S2
G2 4
8 D1
D1
D2
D2
(Top View)
WPM4803
YYWW
YYWW = Date Code
WPM4803 = Specific Device Code
Marking Diagram and explain
6KLSSLQJ
2500Tape&Reel
http://www.willsemi.com
Page 1
0Dec, 2011 Rev 2.5
1 page  
Typical Characteristis
I =250(uA),V =V
0.4 D
GS DS
0.2
0.0
-0.2
-40
0 40 80 120
T Temperature(oC)
J
160
V ,Variance vs Temperature
GS
0.3
V =4.5V
0.2 GS
0.1
V =6.0V
GS
V =10V
GS
0.0
0 10 20 30 40 50
I ,Drain Current(A)
D
R Resistance VS I ,Drain Current
DSON
D
WPM4803
60
V =10V I =5.7A
GS D
55
50
45
40
35
-40
0 40 80 120 160
T Temperature(oC)
J
R Resistance VS T Temperature
DSON
J
http://www.willsemi.com
Page 4
0Dec, 2011 Rev 2.5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM4803.PDF ] | |
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