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PDF WPM5001 Data sheet ( Hoja de datos )

Número de pieza WPM5001
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo



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No Preview Available ! WPM5001 Hoja de datos, Descripción, Manual

WPM5001
Single P-Channel, -50V, -0.3A, Power MOSFET
VDS (V)
-50
Typical Rds(on) (Ω)
3.0@ VGS= –10V
3.5@ VGS= –5V
WPM5001
Http//:www.sh-willsemi.com
Descriptions
The WPM5001 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM5001 is Pb-free and
Halogen-free.
Features
SOT-23
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
W=Willsemi
01= Device Code
*= Month (A~Z)
Marking
Order information
Device
WPM5001-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2014 - Rev.1.0

1 page




WPM5001 pdf
WPM5001
100
f = 1 MHz
80
V =0V
GS
60
Ciss
40
20
0
0
60
50
40
Coss
Crss
2468
-V - Drain to Source Voltage(V)
DS
Capacitance
10
TJ(Max) =150°C
TA=25°C
30
20
10
0
1E-4 1E-3 0.01
0.1
1
10
Pulse width (S)
100 1000
Single pulse power
0.5
0.4
0.3
0.2
T =150oC
A
T =25oC
A
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V - Source to Drain Voltage (V)
SD
Body diode forward voltage
10
1
Limit by Rdson
1ms
0.1 10ms
0.01
TA=25°C
Single Pulse
DC 100ms
1s
10s
Bvdss Limit
1E-3
0.1
1 10 100
-VDS- Drain Source Voltage (V)
* VGS> minimum VGS at which RDS(on) is specified
Safe operating power
5
VGS = -10 V
4 VDS = -25 V
ID = -0.4 A
3
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd. 5 Feb, 2014 - Rev.1.0

5 Page










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