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PDF WPMD2010 Data sheet ( Hoja de datos )

Número de pieza WPMD2010
Descripción MOSFET ( Transistor )
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo



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No Preview Available ! WPMD2010 Hoja de datos, Descripción, Manual

WPMD2010
Dual P-Channel, -20 V, -3.6A, Power MOSFET
Description
The WPMD2010 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is
suitable for use in DC-DC conversion applications. Standard
Product WPMD2010 is Pb-free.
Features
V(BR)DSS
20 V
RDS(on) Typ
75m@ 4.5V
101m@ 2.5V
z Lower RDS(on) Solution in 2x2 mm Package
z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate
Drive Logic Level
z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
z Bidirectional Current Flow with Common Source
Configuration
z DFN6 Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
Application
z Optimized for Battery and Load Management Applications in
Portable Equipment
z LiIon Battery Charging and Protection Circuits
z High Power Management in Portable, Battery Powered
Products
z High Side Load Switch  
Order information
Part Number
WPMD2010-6/TR
Package
DFN 6
Will Semiconductor
Page 1
WPMD2010
Http://www.willsemi.com
PIN CONNECTIONS
MARKING DIAGRAM
WLSI
FYWW
F = Specific Device Code
YWW = Date Code
Shipping
3000Tape&Reel
Dec,2011 Rev. 1.1

1 page




WPMD2010 pdf
WPMD2010
Will Semiconductor
Page 5
Dec,2011 Rev. 1.1

5 Page










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