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PDF WPMD2013 Data sheet ( Hoja de datos )
| Número de pieza | WPMD2013 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPMD2013 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WPMD2013
Dual P-Channel, -20V, -0.64A, Small Signal
MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.550@ VGS=-4.5V
0.740@ VGS=-2.5V
0.860@ VGS=-1.8V
Descriptions
The WPMD2013 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WPMD2013 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-563
WPMD2013
Http//:www.willsemi.com
SOT-563
D1 G2 S2
6 54
1 23
S1 G1 D2
Pin configuration (Top view)
6 54
13*
1 23
13 = Device Code
* = Month (A~Z)
Marking
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
Order information
Device
Package
Shipping
WPMD2013-6/TR SOT-563 3000/Reel&Tape
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.3
1 page  
120
90
60
30
0
0
V =0
GS
f=100KHZ
Cin
Cout
Crss
2468
-V - Drain to Source Voltage (V)
DS
Capacitance
10
Single pulse power
WPMD2013
250
200
T=1250C
150
100
T=250C
50
0.4
0.5 0.6 0.7 0.8
-V - Source to Drain Voltage(V)
SD
Body diode forward voltage
0.9
10.00
TJ(Max)=150°C, TA=25°C
1.00
0.10
RDS(ON)
limited
DC
0.01
0.1
1 10
-VDS (Volts)
100μs
1ms
10ms
0.1s
1s
10s
100
Safe operating power
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=350°C/W
1
0.1
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
PD
Ton
T
1 10
Transient thermal response (Junction-to-Ambient)
100 1000
Will Semiconductor Ltd.
5 Dec,2011 - Rev.1.3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WPMD2013.PDF ] | |
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