(PDF) WSB5556Z Datasheet - Schottky Barrier Diode

Número de pieza	WSB5556Z
Descripción	Schottky Barrier Diode
Fabricantes	WillSEMI
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No Preview Available ! WSB5556Z Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage current  Small package DFN0603-2L Applications  Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5556Z Http://www.sh-willsemi.com DFN0603-2L(Bottom View) Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 2 150 -40 ~ 150 -40 ~ 150 Unit V V mA A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Reverse Voltage Forward Voltage Reverse current Junction capacitance Thermal Resistance VR VF IR CJ Rθ(JA) IR=100uA IF=1mA IF=10mA VR=10V VR=30V VR=5V, F=1MHz Junction to Ambient Order Information Device WSB5556Z-2/TR Package DFN0603-2L Min. 30 Typ. 16 Max. 0.28 0.36 6 15 650 Unit V V V uA uA pF K/W Marking F(1) Shipping 10000/Reel&Tape Note 1：= Month code(A~Z); F= Device code; Will Semiconductor Ltd. 1 2015/3/4 - Rev.1. 0 1 page

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PDF WSB5556Z Data sheet ( Hoja de datos )