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PDF WCM2001 Data sheet ( Hoja de datos )
| Número de pieza | WCM2001 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
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Hay una vista previa y un enlace de descarga de WCM2001 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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WCM2001
N- and P-Channel Complementary, 20V, MOSFET
V(BR)DSS
N-Channel
20 V
P-Channel
-20 V
RDS(on) Typ.
( mȍ)
180 @ 4.5V
225 @ 2.5V
280 @ 1.8V
85 @ -4.5V
110 @ -2.5V
150 @ -1.8V
Descriptions
The WCM2001 is the N- and P-Channel
enhancement MOS Field Effect Transistor as a single
package for DC-DC converter or Load switch
applications, uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. Standard Product WCM2001 is Pb-free.
WCM2001
Http://www.willsemi.com
D1 G2 S2
6 54
1 23
S1 G1 D2
Pin configuration (Top view)
Features
z Trench Technology
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with DFN2x2-6L.
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
WLSI
3J
WW
=Company
= Device Code
= Week Code
Marking
Order Information
Device
Package
Shipping
WCM2001-6/TR DFN2x2-6L 3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.3
1 page  
Typical Performance Graph (N-Channel)
4
VGS= 2.5V ~5.0V
3 VGS=2.0V
2
VGS=1.5V
1
0
0.0 0.4 0.8 1.2 1.6 2.0
VDS-Drain-to-Source Voltage(V)
Output characteristics
400
350
V =1.8V
GS
300
250
V =2.5V
GS
200
V =4.5V
GS
150
100
0.4 0.8 1.2 1.6
IDS-Drain-to-Source Current(A)
On-Resistance vs. Drain current
320
VGS=4.5V, ID=0.55A
2.0
280
240
200
160
120
-50 -25
0 25 50 75 100 125 150
Temperature(oC)
On Resistance vs. Junction Temperature
WCM2001
2.0
V =5V
DS
1.6
1.2
T=-50oC
T=25oC
0.8
T=125oC
0.4
0.0
0.0
1600
0.4 0.8 1.2 1.6
VGS-Gate-to-Source Voltage(V)
Transfer characteristics
2.0
1200
800
400
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS-Gate-to-Source Voltage(V)
On-Resistance vs. Gate-to-Source voltage
0.8
I =250uA
D
0.7
0.6
0.5
0.4
0.3
0.2
-50 -25 0 25 50 75 100 125
Temperature (oC)
Threshold voltage vs. Temperature
150
Will Semiconductor Ltd.
5 Dec,2011 - Rev.1.3
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet WCM2001.PDF ] | |
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