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부품번호 | WCR650N60TG 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | WillSEMI | ||
로고 | |||
WCR650N60T Series
WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN
600V N-Channel Super Junction MOSFET
Description
Features
The WCR600N60T series is new generation of high voltage
MOSFET family that is utilizing an advanced charge balance
mechanism for outstanding low on resistance and lower gate
650V@TJ=150°C
Typ.RDS(on)=0.57Ω
Low gate charge(typ. Qg= 9.6nC)
charge performance. This advanced technology has been tai-
lored to minimize conduction loss, provide superior switching
100% avalanche tested
100% Rg tested
performance, and withstand extreme dv/dt rate and higher
avalanche energy. This device is suitable for various AC/DC
power conversion in switching mode operation for higher
efficiency.
Order Information
Device
Package
Marking
Units/Tube
WCR650N60T-3/T
TO-220
WCR650N60TYYWW
50
WCR650N60TF-3/T
TO-220-F
WCR650N60TFYYWW
50
WCR650N60TN-3/T TO-251(IPAK) WCR650N60TGYYWW
70
WCR650N60TG-3/T TO-252E-2 WCR650N60TNYYWW
Note 1: WCR650N60T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR650N60TF=Device code ; YY=Year ;WW=Week (A~z);
Note 3: WCR650N60TG=Device code ; YY=Year ;WW=Week (A~z);
Note 4: WCR650N60TN=Device code ; YY=Year ;WW=Week (A~z);
70
WCR
650N60
TFYYWW
WCR
650N60
TYYWW
WNM
650N60
TNYYWWW
TO-220F
TO-220
TO-251(IPAK)
Absolution Maximum Ratings TA=250C unless otherwise noted
WCR650N60T
Parameter
Symbol WCR650N60TN
WCR650N60TF
WCR650N60TG
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
7.3
4.6
16
86
1.7
0.2
Power Dissipation
TC=25°C
Derate above 25°C
PD
62.5
0.5
27.7
0.22
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
TL
260
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
2
4.5
WCR
650N60
TGYYWW
TO-252E-2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Jan, 2016 - Rev.1.0
WCR650N60T Series
10 4
1
25oC
0.1
-55oC
3
2
1
Eoss
0.01
0.4
1
0.6 0.8 1.0
V -Source-to-Drain Voltage(V)
sd
Body diode forward voltage
1.2
f=1MHz
Ciss
0.1
0.01
1E-3
1
80
Coss
Crss
10
VDS(V)
Capacitance
100
0
0 100 200 300 400
V (V)
DS
Coss stored Energy
10
VDD=480V ID=3.5A
8
500
6
4
2
0
0 2 4 6 8 10
Qg(nC)
Gate charge Characteristics
60
TO-220
TO252E-2
TO251-IPAK
40
20
TO-220F
0
0
50 100
TCASE(oC)
Power dissipation
150
Will Semiconductor Ltd. 4 Jan, 2016 - Rev.1.0
4페이지 TO-251E(IPAK)
WCR650N60T Series
TO-252E-2
Will Semiconductor Ltd. 7 Jan, 2016 - Rev.1.0
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ WCR650N60TG.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WCR650N60T | MOSFET ( Transistor ) | WillSEMI |
WCR650N60TF | MOSFET ( Transistor ) | WillSEMI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |