|
|
|
부품번호 | WNM3019 기능 |
|
|
기능 | MOSFET ( Transistor ) | ||
제조업체 | WillSEMI | ||
로고 | |||
WNM3019
Small Signal N-Channel, 30V, 0.2A, MOSFET
VDS (V) Typical Rds(on) (Ω)
1.2@ VGS=10V
30 1.4@ VGS=4.5V
1.9@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNM3019 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in small signal switch. Standard Product WNM3019
is Pb-free and Halogen-free.
WNM3019
Http://www.sh-willsemi.com
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
HBM ESD protection >2 kV
Small package SOT-523
Applications
Driver: Relay, Solenoid, Lamps,Hammers etc.
Power supply converters circuit
Load/Power Switching for potable device
19 = Device Code
* = Month (A~Z)
Marking
Order information
Device
WMN3019-3/TR
Package
Shipping
SOT-523 3000/Reel&Tape
Will Semiconductor Ltd.
1 2015/8/10 – Rev. 1.0
Typical Characteristics (Ta=25oC, unless otherwise noted)
WNM3019
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
VGS=2.5V
VGS=4V
VGS=4.5V
VGS=10V
0.5 1.0 1.5
V - Drain to Source Voltage(V)
DS
2.0
Output characteristics
1.0
VDS=3.0V
0.8
0.6
-55OC
25OC
150OC
0.4
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5
V - Gate to Source Voltage(V)
GS
3.0
Transfer characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
VGS=2.5V
VGS=4V
VGS=4.5V
VGS=10V
0.1 0.2 0.3 0.4
I - Drain to Source Current(A)
DS
0.5
On-Resistance vs. Drain current
30
I =0.25A
D
25
25oC
20 150oC
15
10
5
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS-Gate to Source Voltage(V)
On-Resistance vs. Gate-to-Source voltage
2.0
1.8
V =4.5V
GS
ID=0.25A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0 50 100
Temperature(C)
150
On-Resistance vs. Junction temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
ID=250uA
0 50 100
Temperature (C)
150
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4 2015/8/10 – Rev. 1.0
4페이지 Package outline dimensions
WNM3019
Will Semiconductor Ltd.
7 2015/8/10 – Rev. 1.0
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ WNM3019.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WNM3011 | N-Channel MOSFET | Will Semiconductor |
WNM3013 | N-Channel MOSFET | Will Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |