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부품번호 | WNM3025 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | WillSEMI | ||
로고 | |||
WNM3025
Single N-Channel, 30V, 0.23A, Power MOSFET
VDS (V)
30
Typical RDS(on) (Ω)
1.2 @VGS=10V
1.4 @VGS=4.5V
WNM3025
Http://www.sh-willsemi.com
G
S
D
Descriptions
The WNM3025 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3025 is Pb-free.
DFN1006-3L
D
Features
GS
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
J = Device Code
* = Month(A~z)
Marking
Order information
Device
Package
Shipping
WNM3025-3/TR DFN1006-3L 10K/Tape&Reel
Will Semiconductor Ltd. 1 2016/10/21- Rev.1.0
Typical Characteristics (Ta=25oC, unless otherwise noted)
WNM3025
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
VGS=2.5V
VGS=4V
VGS=4.5V
VGS=10V
0.5 1.0 1.5
VDS- Drain to Source Voltage(V)
2.0
Output characteristics
1.0
VDS=3.0V
0.8
0.6
-55OC
25OC
150OC
0.4
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VGS- Gate to Source Voltage(V)
3.0
Transfer characteristics
4.0
3.5
3.0
2.5 VGS=2.5V
VGS=4V
2.0
VGS=4.5V
VGS=10V
1.5
1.0
0.5
0.0
0.0
0.1 0.2 0.3 0.4
IDS- Drain to Source Current(A)
0.5
On-Resistance vs. Drain current
30
ID=0.25A
25
25oC
20 150oC
15
10
5
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS-Gate to Source Voltage(V)
On-Resistance vs. Gate-to-Source voltage
2.0
1.8
V =4.5V
GS
ID=0.25A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0 50 100
Temperature(C)
150
On-Resistance vs. Junction temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
ID=250uA
0 50 100
Temperature (C)
150
Threshold voltage vs. Temperature
Will Semiconductor Ltd. 4 2016/10/21- Rev.1.0
4페이지 Package outline dimensions
DFN1006-3L
WNM3025
Top View
Bottom View
Side View
Recommend PCB Layout (Unit: mm)
0.45
0.45
0.25
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd. 7 2016/10/21- Rev.1.0
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ WNM3025.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WNM3025 | MOSFET ( Transistor ) | WillSEMI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |