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PDF WPM2049 Data sheet ( Hoja de datos )
| Número de pieza | WPM2049 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM2049 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM2049
Single P-Channel, -20V, -0.51A, Power MOSFET
VDS (V)
-20
Typical Rds(on) (Ω)
0.480@ VGS=-4.5V
0.620@ VGS=-2.5V
0.780@ VGS=-1.8V
WPM2049
Http://www.sh-willsemi.com
G
S
D
Descriptions
The WPM2049 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2049 is Pb-free and
Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
DFN1006-3L
D
GS
Pin configuration (Top view)
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
E = Device Code
* = Month (A~Z)
Marking
Order information
Device
WPM2049-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd. 1 July,2015 - Rev.1.0
1 page  
WPM2049
120
90
60
30
0
0
9
6
VGS=0
f=100KHZ
Ciss
Coss
Crss
2468
-VDS - Drain to Source Voltage (V)
10
Capacitance
TJ(Max) =150°C
TA=25°C
3
0
1E-4
1E-3
0.01 0.1
1
Pulse width (S)
10
100 1000
Single pulse power
250
200
T=1250C
150
100
T=250C
50
0.4
0.5 0.6 0.7 0.8
-VSD - Source to Drain Voltage(V)
0.9
Body diode forward voltage
10
1 Limit by Rdson
IDM Limit
0.1
0.01
0.1
100us
1ms
DC 10ms
TA=25°C
Single Pulse
BVdss Limit
100ms
1s
10s
1 10
-VDS - Drain to Source Voltage (V)
*VGS>minimum VGS at which RDS(on) is specified
100
Safe operating power
5
4
VDS= -10V
ID= - 0.45A
3
2
1
0
0 150 300 450 600 750 900
Qg(pC)
Will Semiconductor Ltd. 5 July,2015 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM2049.PDF ] | |
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