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BC847CDXV6T5G 데이터시트 PDF




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BC847CDXV6T5G 데이터시트, 핀배열, 회로
BC847CDXV6T1G,
SBC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT563 which is designed for
low power surface mount applications.
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are PbFree Devices
MAXIMUM RATINGS
Rating
Symbol BC847 BC848 Unit
Collector Emitter Voltage
VCEO
45
30
V
Collector Base Voltage
VCBO
50
30
V
Emitter Base Voltage
VEBO 6.0 5.0
V
Collector Current Continuous IC 100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR4 @ Minimum Pad
Symbol
PD
RqJA
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
Symbol
PD
RqJA
Max
500
4.0
250
Unit
mW
mW/°C
°C/W
TJ, Tstg 55 to +150
°C
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
BC847CDXV6T1
6
1
SOT563
CASE 463A
MARKING DIAGRAMS
1x M G
G
1
1x = Device Code
x = G or M
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 4
1
Publication Order Number:
BC847CDXV6T1/D




BC847CDXV6T5G pdf, 반도체, 판매, 대치품
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
TYPICAL CHARACTERISTICS
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
0.8
0.4
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1 1.0 10
IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region
20
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 6. BaseEmitter Temperature Coefficient
10
7.0 TA = 25°C
5.0 Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
20
40
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 8. CurrentGain Bandwidth Product
1
100 mS 10 mS
0.1 1 S 1 mS
Thermal Limit
0.01
0.001
0.1
1 10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
100
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
BC847CDXV6T5

Dual General Purpose Transistors

ON Semiconductor
ON Semiconductor
BC847CDXV6T5G

Dual General Purpose Transistors

ON Semiconductor
ON Semiconductor

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