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MMBT3904TT1 데이터시트 PDF




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기능 General Purpose Transistors
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MMBT3904TT1 데이터시트, 핀배열, 회로
WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSeURnFAeCrEaMlOPUuNTrSpCoHOsTeTKTY BrAaRnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
NPNFBeaStacilhtiucproroecnesss design, excellent power dissipation offers
FEAbTeUttRerEreverse leakage current and thermal resistance.
ƽSLoimopwtpimlipfiierzosefCibleiorcsauuridtrfDasepcseaigcmneo.. unted application in order to
ƽRLooHwSpopwroedruloctsfso,rhpigahckeinffgiccieondcey.suffix "G"
HHaiglohgceunrrfreenet pcaropdaubcitlitfoy,r lpoawcfkoinrwg acroddveosltuaffgixe "dHro" p.
High surge capability.
OR•• DUGElutRraarIdNhriGignhgI-NsfoFprOeoeRvdeMsrAvwoiTtlctIaOhgiNnegp. rotection.
DSeivliiccoen epitaxial plaMnaarrkcihnigp, metal siSlichoipnpjiunngction.
MMLBeTa3d9-0fr4eTeTp1arts meet MenAvironment3a0l 0s0ta/Tnadpaer&dRs eoef l
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXMIMeUcMhRaATnINicGaSl data
EpoRxayti:nUgL94-V0 rated flamSeyrmebtaorldant Value
Unit
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-523
0.040(1.0)
0.024(0.6)
ColCleactsoer–:EMmoitltdeer dVoplltaagsetic, SOD-V12C3EOH 40 Vdc
ColTleecrtmorinBaalse:PVloaltaegdeterminals,VsoClBdOerable per 6M0IL-STD-75V0d,c
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
Emitter–Base VMolteatgheod 2026 V EBO
ColPleocltaorr
iCtyur:rIenndt
icaCteodntbinyucoautsh
o
d
eI
b
C
a
n
d
Mounting Position : Any
THERWMeAiLghCt H: AApRpAroCxTimEaRteISdT0I.C0S11 gram
Characteristic
6.0 Vdc
200 mAdc
Symbol
Max
Dimensions in1inches and (millimeters)
BASE
Unit
2
EMITTER
Total DevicMeADXissIMipaUtioMn FRRAT4INBoGarSd, A(1N) D ELECTRPIDCAL CHAR20A0CTERISmTWICS
RatingTsAa=t 25℃°C ambient temperature unless otherwise specified.
SingleDpehraaste ahbaolfvwea2v5e°,C60Hz, resistive of inductive load.
1.6 mW/°C
  For caTphaecirtmivael lRoaedsi,sdtaenracete, Jcuunrrcetinotnbtyo 2A0m%bient
Total Device DisRsiApaTtIiNonGS
MarkingFCRo-4deBoard(2), TA = 25°C
MaximuDmerRaetecuarrbeonvteP2e5a°kCReverse Voltage
MaximuTmheRrMmSalVRoeltsaigsetance, Junction to Ambient
MaximuJmunDcCtioBnloacnkdinSgtVoroaltgaegeTemperature
RθJA 600 °C/W
SYMBOLPFDM120-MH FM1303-0M0H FM140-MHmFWM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
VRRM
20
VRMS RθJA 14
VDC TJ , Tst2g 0
13 14 15
302.4 40 mW/°5C0
21400 28 °C/W35
–5350to +15040 °C 50
16
60
42
60
18 10
115 120
80 100 150 200
56 70 105 140
80 100 150 200
Maximum Average Forward Rectified Current
IO
  DEVICE MARKING
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimMpoMsBedTo3n90ra4teTdT1loa=dM(JAEDEC method)
IFSM
TypEicLaEl TChTerRmIaCl AReLsiCstHanAceR(ANCotTeE2R) ISTICS (TA = 25°CRuΘnJAless otherwise not ed.)
 Typical Junction Capacitance (Note 1)
CJ
Operating TemperatuCrehRaarancgteeristic
TJ Symbol -55 to M+1in25
1.0
 
30
40
120
Max U  nit
 
 
-55 to +150
 
StoOraFgeFTCeHmApeRraAtuCreTREaRnIgSeTICS
 
Collector–EmCiHtteArRBArCeaTkEdRoISwTnICVoSltage(3)
Maximu(ImCF=o1rw.0amrdAVdoclt)age at 1.0A DC
MaximuCmolAlevcetorargeBaRseeveBrrseeaCkduorrwennt Vaot lta@gTeA=25℃
Rated D(ICC =Blo1c0kµinAgdVco) ltage
@T A=125℃
  Emitter–Base Breakdown Voltage
NOTES:(I E = 10 µAdc)
TSTG
- 65 to +175
SYMBOLVF(BMR1)C2E0O-MH
40
FM130-MH
FM140-MH
FM150-MH
Vdc
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
VF
V (BR)CBO
IR
V (BR)EBO
0.50
60
6.0
0.70
— Vdc0.5
10
— Vdc
0.85
0.9 0.92
 
1- MeasBuraesdeaCt 1uMtoHffZCaunrdreanptplied reverse voltage of 4.0 VDC.
I BL
— 50 nAdc
2- Therm( aVl RCEe=sis3t0anVcedcF,roVmEBJu=nc3t.io0nVtodcA,m)bient
  Collector Cutoff Current
  ( V CE = 30Vdc, V BE = 3.0Vdc )
I CEX — 50 nAdc
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
2012-112012-06
WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR




MMBT3904TT1 pdf, 반도체, 판매, 대치품
WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSeURnFAeCrEaMlOPUuNTrSpCoHOsTeTKTY BrAaRnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
B5a00tch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
L3o0w0 profile surface mounted application inIoCr/IdBe=r1t0o
o2p0t0imize board space.
Low power loss, high efficiency.
100
Hi7g0h
Hi5g0h
current capability,
surge capability.
low
forward
voltage
t r@ V
drop.
CC = 3.0
V
Guardring for overvoltage protection.
Ul3t0ra high-speed switching.
40 V
Si2li0con epitaxial planar chip, metal silicon junction.
LMe1IaL70 d-S-fTreDe-1p9a5rt0s0m/2e2e8t en
RoH5 S product for packing
vironmental st
cotdde@sVufOfBix= "0GV"
a
n
d
a
rds
2.0
1o5f
V
V
Halo1g.e0 n free2.0pro3.d0uc5t .f0or7.p0a10cking co20de 3s0uff5ix0 "H70" 100 200
MechanicIaC ,lCdOaLLtEaCTOR CURRENT (mA)
Epoxy : UL94-V0Friagtuerdefl5a.mTeurrentaOrdnanTtime
Package outline
500
300
200
100
70
50
30
20
10
7
5
1.0
SOD-123H V CC = 40 V
I C /I B = 10
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I C , COLLECTOR CURRENT (mA)
Figure 6. Rise Time
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
500
Terminals
:Plated
terminals,
solderable
,
pt esr= Mt sIL1-/S8 tTf D-750
300
200
I C /I B =2M0 ethIoCd/I 2B =01206
I B1 = I B2
Polarity : Indicated by cathode band
100
Mo7u0 nting Position : Any
500
300
200
100
70
0.031(0.8) Typ.
0.031(0.8) Typ.
V CC = 40 V
I B1 = I B2
DimensionsI Cin/IiBn=ch2e0s and (millimeters)
We50ight : Approximated 0.011 gram I C /I B =20
50
30
20
MAXIMUM
RATINGS
AND
I C /I B =10
ELECTRICAL
CHAR32A00 CTERISTICISC/I
B
=
10
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phas1e70 half wave, 60Hz, resistive of inductive load.
10
7
  For capacitiv5e load, derate current by 20%
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
I C , COLLECTOR CURRENT (mA)
12
13
14 I C , C1O5 LLECT1O6R CURR1E8NT (mA)10
115 120
Maximum Recurrent Peak RevFerisgeuVroelt7ag. eStorage TimVeRRM
20
30
40 50Figure680. Fall Ti8m0e 100
150 200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56 70
105 140
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200
Maximum Average Forward Rectified CurreTntYPICAL AIUO DIO SMALL–SIGNAL CHARACTERIS1T.0ICS
 
  NOISE FIGURE VARIATIONS
 
Peak Forward
superimposed
Surge Current 8.3 ms single half
on rated load (JEDEC method)
sine-wave
(V
CEIF=SM5.0
Vdc,
T
A
=
25°C,
Bandwidth
=
1.0
Hz)
30
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
 
 
40  
120  
Operating Tem12perature Range
SOURCE RESISTANCE=200
  Storage
Temperature
10
RIaCn=g1e.0
mA
TJ
TSTG
-55 to +11245
 
12 f = 1.0 kHz I C = 1.0-m6A5 to +175
-55 to +150
Maximum
8
Forward
CHARACTESROUISRTCIECSRESISTANCE
Voltage at 1.I0CA= D0.C5 mA
=20S0YMBOL
VF
FM120-MH
FM130-MH10FM140-MH
0.850
FIMC =1500.5-MmHAFM160-MH
0.70
FM180-MH FM1100-MH FM1150-MH
0.85 I C = 50 µA 0.9
FM1200-MH
0.92
Maximum Aver6age Reverse Current at S@OTUAR=C2E5RESISTANCIRE =1.0k
Rated DC Blocking Voltage
I@C =T5A0=µ1A25℃
6
0.5 I C = 100 µA
10
 
 
NOTES:
4
4
1- Measured at 12 MHSZOaUnRdCaEppRlEieSdISreTvAeNrCseE=v5o0lt0age of 4.0 VDC.
2
2- Thermal ResistancIeC F=r1o0m0 µJuAnction to Ambient
 0
  0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
100
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
100
f, FREQUENCY (kHz)
Figure 9.
R S , SOURCE RESISTANCE (k)
Figure 10.
2012-112012-06
WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR

4페이지










MMBT3904TT1 전자부품, 판매, 대치품
WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSeURnFeACrEaMlOPUuNTrSpCoHOsTeTKTY BraARnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
Low power loss, high efficiency.
S27-523
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
.067(1.70)
Halogen free product for packing code suffix "H"
Mechanical data
.059(1.50)
Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
.014(0.35)
MAXIMUM RATINGS AND ELECTRICA.0L1C0H(A0R.2A5C)TERISTICS
.043(1.10)Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.035(0.90)  For capacitive load, derate current by 20%
.008(0.20)
.004(0.10)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
12 13
14 15
16
VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200
Maximum Average Forward Rectified Current
 
.004(0.10)MAX.Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
IO
 
IFSM
RΘJA
CJ
TJ
 
 
-55 to +125
1.0
 
30
40
120
 
 
 
-55 to +150
 
Storage Temperature Range
 
.014(0.3T5ST)G
- 65 to +175
.006(0.15)CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
 
NOTES:
1- Measured at 1 MHZ and Dimensions inapplied reverse voltage of 4.0 VDC. inches and (millimeters)
0.5
10
 
2- Thermal Resistance From Junction to Ambient
 
 
2012-112012-06
WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR

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MMBT3904TT1

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