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부품번호 | BD239 기능 |
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기능 | NPN SILICON POWER TRANSISTORS | ||
제조업체 | Bourns | ||
로고 | |||
전체 5 페이지수
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
● Designed for Complementary Use with the
BD240 Series
● 30 W at 25°C Case Temperature
● 2 A Continuous Collector Current
● 4 A Peak Collector Current
● Customer-Specified Selections Available
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
Collector-emitter voltage (IC = 30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
55
70
90
115
45
60
80
100
5
2
4
0.6
30
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT INFORMATION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS631AE
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
10 DC Operation
1·0
0·1
0·01
1·0
BD239
BD239A
BD239B
BD239C
10 100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AB
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ BD239.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BD230 | NPN power transistor | NXP Semiconductors |
BD230 | SILICON POWER TRANSISTOR | SavantIC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |