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PDF MMBT2222A Data sheet ( Hoja de datos )

Número de pieza MMBT2222A
Descripción 40V NPN SMALL SIGNAL TRANSISTOR
Fabricantes Diodes 
Logotipo Diodes Logotipo

MMBT2222A npn transistor


1. NPN Planar Transistor - Cystek






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Features
Epitaxial Planar Die Construction
Complementary PNP Type: MMBT2907A
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
MMBT2222A
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.008 grams (Approximate)
SOT23
Top View
C
B
E
Device Symbol
E
C
Top View
Pin-Out
B
Ordering Information (Notes 4 & 5)
Product
MMBT2222A-7-F
MMBT2222A-13-F
MMBT2222AQ-7-F
Status
Active
Active
Active
Compliance
AEC-Q101
AEC-Q101
Automotive
Marking
K1P
K1P
K1P
Reel Size (inches)
7
13
7
Tape Width (mm)
8
8
8
Quantity per Reel
3,000
10,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
K1P
K1P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
2016
D
2017
E
Jan Feb Mar Apr
1234
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
2022
J
Aug Sep Oct
8 9O
2023
K
Nov
N
2024
L
Dec
D
MMBT2222A
Document number: DS30041 Rev. 16 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated

1 page




MMBT2222A pdf
MMBT2222A
1,000
N
GAI
NT
100
RE
R
U
C
C
D
,E
10
hF
TA = 125°C
TA = -25°C
TA = 25°C
VCE = 1.0V
1
0.1
1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
0.5
R
MTTIE
R-E
O
CT
E
OLL
C
GE()V
OLTA
V
N
O
RATI
,
T)SA
(E
U
SAT
VC
0.4
0.3
0.2
0.1
IC
IB = 10
TA = 25°C
TA = 150°C
TA = -50°C
0
1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
()GEV
TOLA
1.0
0.9
V 0.8
N
O
N-
R
0.7
U
T
R 0.6
MTTIE 0.5
-EE
BAS 0.4
VCE = 5V
TA = -50°C
TA = 25°C
TA = 150°C
, )N
O
0.3
(E
VB 0.2
0.1 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3 Base-Emitter Turn-On Voltage
vs. Collector Current
100
35
f = 1MHz
30
25
E(pF)
C
20
N
CITA 15
CAPA 10
Cibo
5 Cobo
0
0 2 4 6 8 10 12 14 16 18 20
VR, REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteristics
1,000
VCE = 5V
100
2.0
1.8 IC = 1mA
IC = 30mA
1.6 IC = 10mA
IC = 100mA
1.4
1.2 IC = 300mA
1.0
0.8
10
0.6
0.4
1
1 10
IC, COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product
vs. Collector Current
MMBT2222A
Document number: DS30041 Rev. 16 - 2
0.2
0
100
0.001 0.01
0.1
1
10 100
IB, BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
5 of 7
www.diodes.com
April 2016
© Diodes Incorporated

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