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PDF MRF966 Data sheet ( Hoja de datos )
| Número de pieza | MRF966 | |
| Descripción | DUAL GATE GaAs FET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Symbol MRF966 MRF967
Unit
Drain-Source Voltage
—Gate-Source Voltage Reverse
—Gate-Source Voltage Forward
Drain Current
vDs
V G1S
VG1S
VG2S
id
10
-8.0
-8.0
+ 1.0
+ 1.0
60
10
-8.0
-8.0
+ 1.0
+ 1.0
60
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C
Junction Temperature Range
Pd
350
3.5
350 mW
3.5 mW/'C
Tj
-65 to
-65 to
°C
+ 125
+ 125
Storage Channel Temperature
Tstg
-65 to
-65 to
"C
Range
+ 125
+ 125
—Handling and Packaging MES devices are susceptible to damage from electrostatic
charge. Reasonable precautions in handling and packaging MES devices should be
observed.
MRF966
^m^ CASE 317-01, STYLE 1
DUAL GATE
GaAs FET
N-CHANNEL
MRF967
CASE 358-01, STYLE 2
DUAL GATE
GaAs FET
N-CHANNEL
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted]
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(Vqis = VG2S =
" 40 Vdc
'
>D
=
1 °0 /*A>
Gate 1 Leakage Current
(Vqis = -5.0 Vdc, VG 2S = Vqs = 0)
Gate 2 Leakage Current
(VG2S = -5.OVdc.VQlS = VDS = 0)
Gate 1 to Source Cutoff Voltage
(V DS = 5.0 Vdc, V G2 s = 0)
Gate 2 to Source Cutoff Voltage
(VDS = 5.0Vdc,VG iS = 0)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(V DS = 5.0 Vdc, V G 1S = VG2S = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vqs = 5.0 Vdc, VQ2S = 0, Iq = 10 mA, f = 1.0 kHz)
Input Capacitance
(Vqs = 5.0 Vdc, Vq2S = 0, Iq = 10 mA, f = 1.0 MHz)
Reverse Transfer Capacitance
(VQS = 5.0 Vdc, Vq2S = 0, Iq = 10 mA, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
m(Vds = 5.0 Vdc, VQ2S = OH), IDS = 10 A, f = 1.0 GHz)
Common Source Power Gain
(Vds = 5.0 Vdc, VQ2S = °< 1 ),
l DS = 10 mA, f = 1.0 GHz)
Intermodulation Distortion
"(Vqs
=
5°
vdc
'
'DS
=
mA10 ' f 1
=
5 MHz,
f2 = 1001 MHz, VQ2 = 0, Pj n = -40 dBm)
MRF967
MRF966
Symbol
Min
V (BR)DSX
!G1SS
! G2SS
VG1S(off)
v G2S(off)
10
—
—
-2.0
-2.0
'DSS
30
IVfsl
Cjss
C rss
NF
G ps
IMD3
14
—
—
—
13
15
"
Typ
—
—
—
—
—
50
20
0.45
0.04
1.2
15
18
-65
Max
—
10
10
-4.5
-4.5
Unit
Vdc
/iAdc
/iAdc
Vdc
Vdc
80 mAdc
— mmhos
— pF
— PF
1.5 dB
dB
-
~ dB
7-233
1 page  
MRF966 • MRF967
MRF966
—FIGURE 17 CONSTANT GAIN AND NOISE FIGURE
CONTOURS AT VDS = 5.0 V, lDS = 10 mA, f = 500 MHz
(MATCHED OUTPUT)
f(MHz)
500
|
NFopt (dB)
1.0
TMS NFODt
0.76/22°
TML NFopt
0.75/14°
Rn(O)
101.5
r n NF 50 a(dB)
2.03
I
4-5
I
—FIGURE 18 CONSTANT GAIN AND NOISE FIGURE
CONTOURS AT YDS = 5.0 V, Ips = 10 mA, f = 1.0 GHz
(MATCHED OUTPUT)
f(MHz) NF opt (dB)
1000
||
1.2
TMS NF p,
0.74/21°
TML NF0Dt
0.77/12°
Rn(O)
63
rn
1.26
NF 50n(dB)
3.5
|
7-237
I
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF966.PDF ] | |
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