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PDF BFR90 Data sheet ( Hoja de datos )
| Número de pieza | BFR90 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFR90 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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BFR90
CASE 317A-01, STYLE 2
HIGH FREQUENCY TRANSISTOR
NPN SILICON
J<
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 60°C
Derate above 60°C
Storage Temperature
Symbol
v CEO
VCBO
v EBO
"C
PD
Tstq
Value
15
20
3.0
30
180
2.0
- 65 to + 1 50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R &JA
Max
500
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Oc = 1.0 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
C(l = 0.1 mAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(VcB = 10 Vdc, lg = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 14 mAdc, VCe = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(lC = 14 mAdc, Vce = 10 Vdc, f = 0.5 GHz)
Collector-Base Capacitance
(Vcb = 10 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST
Noise Figure
dC = 2.0 mAdc, Vce = 10 Vdc, f = 0.5 GHz)
OC = 2.0 mAdc, Vce = 10 Vdc, f = 1.0 GHz)
Power Gain at Optimum Noise Figure
dC = 2.0 mAdc, VC E = 10 Vdc, f = 0.5 GHz)
dC = 2.0 mAdc, VC E = 10 Vdc, f = 1.0 GHz)
Maximum Available Power(1)
dC = 14 mAdc, VC E = 10 Vdc, f = 0.5 GHz)
dC = 14 mAdc, Vce = 10 Vdc, f = 1.0 GHz)
(DGn
JI21L
(1-|Sii! 2 H1-|S 2 2l-
Symbol
Min
v (BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
15
20
3.0
—
hFE 25
—
<t
Ccb —
NF
Qnf
Gmax
-
-
-
Typ Max Unit
j
|
J
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
— 250 —
—5.0 GHz
0.5 1.0 pF
dB
-2.4
3.0
- dB
15
10
dB
-18
12
7-84
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BFR90.PDF ] | |
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