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PDF 2N5109 Data sheet ( Hoja de datos )
| Número de pieza | 2N5109 | |
| Descripción | NPN RF TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N5109
SILICON
NPN RF TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5109 is a
Silicon NPN Epitaxial Planar RF Transistor mounted
in a hermetically sealed package designed for high
frequency amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=75°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
40
20
3.0
400
400
1.0
2.5
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICEV
VCE=35V, VBE=1.5V
ICEV
VCE=15V, VBE=1.5V, TC=150°C
ICEO
VCE=15V
IEBO
VEB=3.0V
BVCBO
IC=0.1mA
40
BVCER
IC=5.0mA, RBE=10Ω
40
BVCEO
IC=5.0mA
20
VCE(SAT) IC=100mA, IB=10mA
hFE VCE=15V, IC=50mA
40
hFE VCE=5.0V, IC=360mA
5.0
fT
VCE=15V, IC=50mA, f=200MHz
1200
Cob VCB=15V, IE=0, f=1.0MHz
NF VCE=15V, IC=10mA, f=200MHz
3.0
GPE
VCE=15V, IC=50mA, f=200MHz
11
MAX
5.0
5.0
20
100
0.5
210
3.5
UNITS
V
V
V
mA
mA
W
W
°C
UNITS
mA
mA
μA
μA
V
V
V
V
MHz
pF
dB
dB
R4 (7-June 2011)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5109.PDF ] | |
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