Datasheet.kr   

2N3250A 데이터시트 PDF




Motorola Semiconductors에서 제조한 전자 부품 2N3250A은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 2N3250A 자료 제공

부품번호 2N3250A 기능
기능 GENERAL PURPOSE TRANSISTOR
제조업체 Motorola Semiconductors
로고 Motorola Semiconductors 로고


2N3250A 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 5 페이지수

미리보기를 사용할 수 없습니다

2N3250A 데이터시트, 핀배열, 회로
2N3250,A
2N3251,A
2N3250A,2N3251A
JAN, JTX, JTXV AVAILABLE
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation T^ = 25°C
Derate above 25°C
@Total Device Dissipation Jq = 25°C
Derate above 25°C
Operating and Storage Temperature
Temperature Range
Symbol
vCEO
v CBO
VEBO
"c
Pd
PD
TJ. Tstg
2N3250 2N3250A
2N3251 2N3251A
40 60
50 60
5.0
200
0.36
2.06
1.2
6.9
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R 0JC
R0JA
Max
0.15
0.49
Unit
mW/°C
mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (1)
flC = 10 mAdc)
Collector-Base Breakdown Voltage
dC = lOptAdc)
Emitter-Base Breakdown Voltage
(IE = 10 /uAdc)
2N3250, 2N3251
2N3250A, 2N3251A
2N3250, 2N3251
2N3250A, 2N3251A
Collector Cutoff Current
(VCE = 40 Vdc, Vbe = 3.0 Vdc)
Base Cutoff Current
(VCE = 40 Vdc, V BE = 3.0 Vdc)
ON CHARACTERISTICS
DC Forward Current Transfer Radio (1)
dC = 0.1 mAdc, V C E = 1.0 Vdc)
2N3250, 2N3250A
2N3251.2N3251A
Oc = 1.0 mAdc, Vqe = 1.0 Vdc)
2N3250, 2N3250A
2N3251, 2N3251A
flC = 10 mAdc, Vqe = 1.0 Vdc)
2N3250, 2N3250A
2N3251, 2N3251A
dC = 50 mAdc, Vce = 1.0 Vdc)
Collector-Emitter Saturation Voltage (1)
dC = 10 mAdc, Bl = 1.0 mAdc)
dC = 50 mAdc, Bl = 5.0 mAdc)
Base-Emitter Saturation Voltage (1)
dC = 10 mAdc, Bl = 1.0 mAdc)
dC = 50 mAdc, \q = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 10 mAdc, Vce = 20 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Input Capacitance
(VC b = 10 Vdc, cl = 0, f = 100 kHz)
2N3250, 2N3250A
2N3251.2N3251A
2N3250, 2N3250A
2N3251, 2N3251A
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CEX
hFE
v CE(sat)
v BE(sat)
fT
Cobo
Cjbo
Min
40
80
50
100
250
300
-
Max Unit Zl
Vdc
20
nAdc
150
300
0.25
0.5
0.9
1.2
-
6.0
8.0
Vdc
MHz
pF
pF
4-68




2N3250A pdf, 반도체, 판매, 대치품
2N3250,A, 2N3251.A
FIGURE 9
NORMALIZED CURRENT GAIN CHARACTERISTICS
=T, 125 C
L =25 C
=lj -bb U
i
= =NORMALIZED AT cl 10mA.VCE lV
=TYPICAL h FE
74-2N3250. 2N32
67 2N3251. 2N32 51A. JAN 2N3251A
cl
.
COLLECTOR
CURRENT
(n*
10—FIGURE
COLLECTOR SATURATION REGION
§ o.i
j=25 ?
^\g 0.4
,50 mA
^^
1 mA'
/3( mA
1
3
',-, OVERDRIVE FACTOR
FIGURE 11 —SATURATION VOLTAGES
I1
=1 10
=Tj 25 "C
Vsei at)
Vc Elwtl
5 10
cl , COLLECTOR CURRENT (mA)
20
This graph shows the effect of base current on collector current fi is the
current gain of the transistor at 1 volt, and ji f (forced gain) is the ratio of cl Ibf
in a circuit EXAMPLE: For type 2N3251, estimate a base current BF;I ) to insure
saturation at a temperature of 25 C and a collector current of 10 mA.
Observe that at cl
10 mA an overdrive factor of at least 2.5 is required to
drive the transistor well into the saturation region. From Figure 1. it is seen that
h F E (ft 1 volt is typically 167 (guaranteed limits from the Table of Characteristics
can be used for "worst-case" design) . . .
@jio _ h FE
1 Volt
jit
lc Ibf
25 = 167
10 mA;
Ibf ^6.68mAtyp
12—FIGURE
TEMPERATURE COEFFICIENTS
l
"«vct orVcE|,.t)
25-X to 125
25 7 Ctol25 1
55 : Ttn?5 r,
Wv B t orV BE
-
c
i C to
20 30
cl . COLLECTOR CURRENT (mA)
40
4-71

4페이지












구       성 총 5 페이지수
다운로드[ 2N3250A.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
2N3250

GENERAL PURPOSE TRANSISTOR (PNP SILICON)

Boca Semiconductor Corporation
Boca Semiconductor Corporation
2N3250

PNP TRANSISTORS

Central Semiconductor
Central Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵