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PDF MMPQ3906 Data sheet ( Hoja de datos )
| Número de pieza | MMPQ3906 | |
| Descripción | Quad Amplifier/Switch Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier/Switch
Transistor
PNP Silicon
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCB
VEB
IC
–40
–40
–5.0
–200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Power Dissipation @ TA = 25°C
Derate above 25°C
PD
0.4
3.2
800 mW
6.4 mW/°C
Power Dissipation @ TC = 25°C
Derate above 25°C
PD
0.66
5.3
1.92 Watts
15.4 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –4.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
MMPQ3906
Motorola Preferred Device
16
1
CASE 751B–05, STYLE 4
SO–16
Min Typ Max Unit
–40 —
— Vdc
–40 —
— Vdc
–5.0 —
— Vdc
— — –50 nAdc
— — –50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2–440
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMPQ3906.PDF ] | |
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