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부품번호 | MMUN2212LT1 기능 |
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기능 | NPN SILICON BIAS RESISTOR TRANSISTOR | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 12 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMUN2211LT1/D
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
PIN 3
COLLECTOR
(OUTPUT)
• The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
• Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the13 inch/10,000 unit reel.
R1
PIN 1 R2
BASE
(INPUT)
PIN 2
EMITTER
(GROUND)
MMUN2211LT1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
www.DataSheet4U.com
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
VCBO
VCEO
IC
PD
RθJA
TJ, Tstg
TL
Value
50
50
100
*200
1.6
625
– 65 to +150
260
10
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1(2)
MMUN2216LT1(2)
MMUN2230LT1(2)
MMUN2231LT1(2)
MMUN2232LT1(2)
MMUN2233LT1(2)
MMUN2234LT1(2)
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
R1 (K)
10
22
47
10
10
4.7
1
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2211T1/D)
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
MMUN2211LT1 SERIES
250
200
150
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
1
IC/IB = 10
0.1
TA = –25°C
25°C
75°C
100
50 RθJA = 625°C/W
0.01
0
–50
0 50 100
TA, AMBIENT TEMPERATURE (°C)
150
0.001
0
20 40 60
IC, COLLECTOR CURRENT (mA)
80
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
1000 4
VCE = 10 V
TA = 75°C
25°C
–25°C
3
100 2
f = 1 MHz
lE = 0 V
TA = 25°C
1
10
1
10
100 0 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
10
25°C
TA = –25°C
1
0.1
0.01
VO = 5 V
0.001
0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. VCE(sat) versus IC
10
VO = 0.2 V
1
TA = –25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. VCE(sat) versus IC
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
4페이지 TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
MMUN2211LT1 SERIES
1
IC/IB = 10
0.1
0.01
TA = –25°C
25°C
75°C
300
VCE = 10
250
200
150
100
TA = 75°C
25°C
–25°C
50
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
80
01 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
4
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
100
75°C 25°C
TA = –25°C
10
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MMUN2212LT1 | NPN SILICON BIAS RESISTOR TRANSISTOR | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |