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PDF MMUN2232LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMUN2232LT1 | |
| Descripción | NPN SILICON BIAS RESISTOR TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMUN2211LT1/D
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
PIN 3
COLLECTOR
(OUTPUT)
• The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
• Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the13 inch/10,000 unit reel.
R1
PIN 1 R2
BASE
(INPUT)
PIN 2
EMITTER
(GROUND)
MMUN2211LT1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
www.DataSheet4U.com
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
VCBO
VCEO
IC
PD
RθJA
TJ, Tstg
TL
Value
50
50
100
*200
1.6
625
– 65 to +150
260
10
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1(2)
MMUN2216LT1(2)
MMUN2230LT1(2)
MMUN2231LT1(2)
MMUN2232LT1(2)
MMUN2233LT1(2)
MMUN2234LT1(2)
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
R1 (K)
10
22
47
10
10
4.7
1
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2211T1/D)
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
1
IC/IB = 10
0.1
0.01
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
TA = –25°C
25°C
75°C
1000
100
MMUN2211LT1 SERIES
VCE = 10 V
TA = 75°C
25°C
–25°C
– 0.001
0
4
3
2
1
0
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
80
f = 1 MHz
lE = 0 V
TA = 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
100
VO = 0.2 V
10
1
10
1 10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
100 75°C 25°C
TA = –25°C
10
1
0.1
0.01
VO = 5 V
0.001
0
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 10. Output Current versus Input Voltage
TA = –25°C
75°C 25°C
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page 
PACKAGE DIMENSIONS
MMUN2211LT1 SERIES
A
L
3
BS
12
VG
C
D H KJ
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MMUN2232LT1.PDF ] | |
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