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MGSF1N03LT1 데이터시트 PDF




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MGSF1N03LT1 데이터시트, 핀배열, 회로
MGSF1N03LT1
Preferred Device
Power MOSFET
30 V, 2.1 A, Single N−Channel, SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS 30 V
Gate−to−Source Voltage
VGS ±20 V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
State
TA = 85°C
ID
2.1 A
1.5
t 10 s TA = 25°C
2.8
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
0.73 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
1.6 A
1.1
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
IDM 6.0 A
ESD 125 V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ,
TSTG
IS
TL
−55 to
150
2.1
260
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
80 mW @ 10 V
125 mW @ 4.5 V
ID MAX
2.1 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
N3
1
Gate
2
Source
N3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MGSF1N03LT1 SOT−23 3000/Tape & Reel
MGSF1N03LT3 SOT−23 10000/Tape & Reel
MGSF1N03LT3G SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 7
1
Publication Order Number:
MGSF1N03LT1/D




MGSF1N03LT1 pdf, 반도체, 판매, 대치품
MGSF1N03LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
K
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
INCHES
DIM MIN
MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
MILLIMETERS
MIN MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 81−3−5773−3850
http://onsemi.com
4
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MGSF1N03LT1/D

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