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PDF MGSF3442VT1 Data sheet ( Hoja de datos )

Número de pieza MGSF3442VT1
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
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MGSF3442VT1
Preferred Device
Power MOSFET
4 Amps, 20 Volts
N−Channel TSOP−6
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP−6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Mounted on FR4 t  5 sec
VDSS
VGS
ID
IDM
PD
20
± 8.0
4.0
20
2.0
Operating and Storage Temperature
Range
TJ, Tstg − 55 to
150
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
62.5
260
Unit
Vdc
Vdc
A
W
°C
°C/W
°C
http://onsemi.com
4 AMPERES
20 VOLTS
RDS(on) = 70 m
N−Channel
1256
3
4
MARKING
DIAGRAM
4
5
6
3
2
1
TSOP−6
CASE 318G
STYLE 1
442 = Device Code
W = Work Week
442
W
PIN ASSIGNMENT
Drain Drain Source
6 54
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
MGSF3442VT1
TSOP−6 3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MGSF3442VT1/D

1 page




MGSF3442VT1 pdf
MGSF3442VT1
INFORMATION FOR USING THE TSOP−6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
TSOP−6 POWER DISSIPATION
The power dissipation of the TSOP−6 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the TSOP−6 package, PD can be calculated as
follows:
PD =
TJ(max) − TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 2.0 watts.
PD =
150°C − 25°C
62.5°C/W
= 2.0 watts
The 62.5°C/W for the TSOP−6 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 2.0 watts.
There are other alternatives to achieving higher power
dissipation from the TSOP−6 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Cladt. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
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