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Número de pieza | MMFT6661T1 | |
Descripción | Medium Power FET | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
Medium Power Field Effect
Transistor
N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• RDS(on) = 4.0 Ohm Max
• Low Drive Requirement, VGS = 2.0 Volts Max
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 12 mm Tape and Reel
Use MMFT6661T1 to order the 7 inch/1000 unit reel
Use MMFT6661T3 to order the 13 inch/4000 unit reel
1
GATE
MMFT6661T1
Motorola Preferred Device
MEDIUM POWER
TMOS FET
500 mA
90 VOLTS
RDS(on) = 4.0 OHM MAX
®
2,4 DRAIN
4
1
2
3
CASE 318E–04, STYLE 3
TO–261AA
3 SOURCE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage — Non–Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VDS
VGS
ID
PD
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
T6661
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient
Maximum Temperature for Soldering Purposes
Time in Solder Bath
RθJA
TL
1. Device mounted on FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Value
90
± 30
500
0.8
6.4
– 65 to 150
156
260
10
Unit
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C/W
°C
Sec
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
4–84
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MMFT6661T1.PDF ] |
Número de pieza | Descripción | Fabricantes |
MMFT6661T1 | Medium Power FET | Motorola Semiconductors |
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