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부품번호 | J204 기능 |
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기능 | N-Channel JFETs | ||
제조업체 | Vishay | ||
로고 | |||
전체 6 페이지수
N-Channel JFETs
J/SST201 Series
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J/SST201
J/SST202
J/SST204
VGS(off) (V)
−0.3 to −1.5
−0.8 to −4
−0.3 to −2
V(BR)GSS Min (V)
−40
−40
−25
gfs Min (mS)
0.5
1
0.5
IDSS Min (mA)
0.2
0.9
0.2
J201
J202
J204
SST201
SST202
SST204
FEATURES
D Low Cutoff Voltage: J201 <1.5 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low Voltage
Power Supply: Down to 1.5 V
D Low Signal Loss/System Error
D High System Sensitivity
D High Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J201
J202
J204
TO-236
(SOT-23)
D1
S2
3G
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
1
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500
VGS(off) = −0.7 V
VDS = 10 V
400
300 TA = −55_C
25_C
200
Transfer Characteristics
2
VGS(off) = −1.5 V
VDS = 10 V
1.6
TA = −55_C
1.2
25_C
0.8
125_C
100
0.4 125_C
0
0
−0.1
−0.2
−0.3
−0.4
VGS − Gate-Source Voltage (V)
−0.5
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = −0.7 V
1.2
VDS = 10 V
f = 1 kHz
TA = −55_C
0.9 25_C
0.6
125_C
0.3
0
0
−0.1
−0.2
−0.3
−0.4
VGS − Gate-Source Voltage (V)
−0.5
Circuit Voltage Gain vs. Drain Current
200
160
AV
+
1
gfs RL
) RLgos
Assume VDD = 15 V, VDS = 5 V
10 V
120 RL + ID
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
4
VGS(off) = −1.5 V
3.2
VDS = 10 V
f = 1 kHz
2.4
TA = −55_C
25_C
1.6
0.8
0
0
2000
125_C
−0.4
−0.8
−1.2
−1.6
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
−2
1600
1200
VGS(off) = −0.7 V
80
VGS(off) = −0.7 V
−1.5 V
40
0
0.01
www.vishay.com
4
0.1
ID − Drain Current (mA)
1
800
400
0
0.01
−1.5 V
0.1
ID − Drain Current (mA)
1
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
J201 | N-Channel JFETs | Vishay |
J201 | N-Channel General Purpose Amplifier | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |