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Número de pieza | MPQ3762 | |
Descripción | Quad Memory Driver Transistor | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver
Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MPQ3762
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40
–40
–5.0
–1.5
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
750
5.98
1700
13.6
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.25
10
3.2 Watts
25.6 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance(1)
Each Die
Effective, 4 Die
Junction
to Case
100
39
Junction
to Ambient
167
73.5
Unit
°C/W
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
v v1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Min
–40
–40
–5.0
—
—
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
—
–100
nAdc
—
–100
nAdc
2–486
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MPQ3762.PDF ] |
Número de pieza | Descripción | Fabricantes |
MPQ3762 | Quad Memory Driver Transistor | Motorola Semiconductors |
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