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MBT3904DW1T1 데이터시트 PDF




Motorola Semiconductors에서 제조한 전자 부품 MBT3904DW1T1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 MBT3904DW1T1 기능
기능 Dual General Purpose Transistor
제조업체 Motorola Semiconductors
로고 Motorola Semiconductors 로고


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MBT3904DW1T1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these
devices are ideal for low–power surface mount applications where board space is at
a premium.
hFE, 100–300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
6 54
1
23
CASE 419B–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol Value
Collector – Emitter Voltage MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCEO
40
–40
Collector – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCBO
60
–40
Emitter – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VEBO
6.0
–5.0
Collector Current — Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
IC
200
–200
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
RqJA
TJ, Tstg
833
– 55 to
+150
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46
MBT3906DW1T1 = A2
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
MBT3904DW1T1
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
MBT3906DW1T1
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
MBT3946DW1T1*
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1
2–286
Motorola Small–Signal Transistors, FETs and Diodes Device Data




MBT3904DW1T1 pdf, 반도체, 판매, 대치품
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)
DUTY CYCLE = 2%
300 ns
– 0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
Cs < 4 pF*
0
– 9.1 V
+10.9 V
10 k
1N916
< 1 ns
+3 V
275
Cs < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
MBT3904DW1T1 (NPN)
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000
2000
VCC = 40 V
IC/IB = 10
MBT3904DW1T1 (NPN)
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–289

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MBT3904DW1T1 전자부품, 판매, 대치품
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
MBT3904DW1T1 (NPN)
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
VCE = 1.0 V
0.1
0.1
1.0
0.8
0.6
0.4
0.2
0
0.01
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
20 30
50 70 100
200
IC = 1.0 mA
10 mA
30 mA
MBT3904DW1T1 (NPN)
TJ = 25°C
100 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
2.0 3.0
5.0 7.0 10
1.2
TJ = 25°C
1.0
MBT3904DW1T1 (NPN)
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
0.2
0
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
1.0
MBT3904DW1T1 (NPN)
0.5
qVC FOR VCE(sat)
0
– 0.5
– 1.0
– 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
– 55°C TO +25°C
– 55°C TO +25°C
+25°C TO +125°C
– 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
2–292
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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