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Datasheet MBT3906DW1T1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MBT3906DW1T1 | Dual General Purpose Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six� | Motorola Semiconductors | transistor |
2 | MBT3906DW1T1 | Dual General Purpose Transistors | Leshan Radio Company | transistor |
3 | MBT3906DW1T1 | Dual General Purpose Transistor MBT3906DW1T1 Dual General Purpose Transistor
The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices i | ON Semiconductor | transistor |
4 | MBT3906DW1T1G | Dual General Purpose Transistor MBT3906DW1T1G Dual General Purpose Transistor
The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices | ON Semiconductor | transistor |
MBT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MBT2222 | SILICON PLANAR EPITAXIAL TRANSISTORS MBT2222 MBT2222A
MBT222/MBT222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N-P-N TRANSISTORS
13
ABSOLUTE MAXIMUM RATINGS
Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to DAIWA transistor | | |
2 | MBT2222A | SILICON PLANAR EPITAXIAL TRANSISTORS MBT2222 MBT2222A
MBT222/MBT222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N-P-N TRANSISTORS
13
ABSOLUTE MAXIMUM RATINGS
Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to DAIWA transistor | | |
3 | MBT35200 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
A Device of the mX™ Family
http://onsemi.com
35 VOLTS 2.0 AMPS PNP TRANSISTOR
MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo ON Semiconductor transistor | | |
4 | MBT35200MT1 | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
A Device of the mX™ Family
http://onsemi.com
35 VOLTS 2.0 AMPS PNP TRANSISTOR
MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo ON Semiconductor transistor | | |
5 | MBT3904DW1T1 | Dual General Purpose Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six� Motorola Semiconductors transistor | | |
6 | MBT3904DW1T1 | Dual General Purpose Transistors Leshan Radio Company transistor | | |
7 | MBT3904DW1T1 | Dual General Purpose Transistors MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors
The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. ON Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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