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PDF MBT3946DW1T1 Data sheet ( Hoja de datos )

Número de pieza MBT3946DW1T1
Descripción Dual General Purpose Transistor
Fabricantes Motorola Semiconductors　
Logotipo Motorola Semiconductors Logotipo



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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these
devices are ideal for low–power surface mount applications where board space is at
a premium.
• hFE, 100–300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
6 54
1
23
CASE 419B–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol Value
Collector – Emitter Voltage MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCEO
40
–40
Collector – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCBO
60
–40
Emitter – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VEBO
6.0
–5.0
Collector Current — Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
IC
200
–200
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
RqJA
TJ, Tstg
833
– 55 to
+150
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46
MBT3906DW1T1 = A2
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
MBT3904DW1T1
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
MBT3906DW1T1
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
MBT3946DW1T1*
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1
2–286
Motorola Small–Signal Transistors, FETs and Diodes Device Data

1 page




MBT3946DW1T1 pdf
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)
500 500
300
IC/IB = 10
300
VCC = 40 V
200 200 IC/IB = 10
100
70 tr @ VCC = 3.0 V
50
30 40 V
20
10 MBT3904DW1T1 (NPN)
7 td @ VOB = 0 V
5
1.0 2.0 3.0 5.0 7.0 10
20 30
15 V
2.0 V
50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
100
70
50
30
20
10 MBT3904DW1T1 (NPN)
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
200
500
300
200 IC/IB = 20
IC/IB = 10
t′s = ts – 1/8 tf
IB1 = IB2
100
70
50 IC/IB = 20
30 IC/IB = 10
20
10 MBT3904DW1T1 (NPN)
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
200
500
300 VCC = 40 V
200 IB1 = IB2
IC/IB = 20
100
70
50
30 IC/IB = 10
20
10 MBT3904DW1T1 (NPN)
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
WSOURCE RESISTANCE = 200
10 IC = 1.0 mA
W8 SOURCE RESISTANCE = 200
IC = 0.5 mA
6 SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
W2 SOURCE RESISTANCE = 500
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
MBT3904DW1T1 (NPN)
10 20 40 100
f, FREQUENCY (kHz)
Figure 9. Noise Figure
14
12 f = 1.0 kHz IC = 1.0 mA
10 IC = 0.5 mA
8
6
IC = 50 mA
IC = 100 mA
4
2 MBT3904DW1T1 (NPN)
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
RS, SOURCE RESISTANCE (k OHMS)
40
100
Figure 10. Noise Figure
2–290
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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