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PDF MMBV3102LT1G Data sheet ( Hoja de datos )
| Número de pieza | MMBV3102LT1G | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | ON Semiconductor | |
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MMBV3102LT1G
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 30 Vdc
IF 200 mAdc
PD 225 mW
1.8 mW/°C
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3
Cathode
1
Anode
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
M4CM G
G
1
M4C = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBV3102LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
1
Publication Order Number:
MMBV3102LT1/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MMBV3102LT1G.PDF ] | |
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