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PDF MV1404 Data sheet ( Hoja de datos )
| Número de pieza | MV1404 | |
| Descripción | Silicon Hyper Abrupt Tuning Diodes | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hyper-Abrupt Tuning Diodes
These devices are designed with high capacitance and a capacitance change of
greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning
over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning
applications in lower RF frequencies.
• High Capacitance: 120–250 pF
• Large Capacitance Change with Small Bias Change
• Guaranteed High Q
• Available in Standard Axial Glass Packages
2
Anode
1
Cathode
MV1403
MV1404
MV1405
120 – 250 pF
12 VOLTS
HIGH TUNING RATIO
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR 12 Vdc
Forward Current
IF 250 mAdc
Device Dissipation @ TA = 25°C
Derate above 25°C
PD 400 mW
2.67 mW/°C
1 CASE 51–02
(DO–204AA)
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 10 Vdc, TA = 25°C)
Series Inductance
(f = 250 MHz, Lead Length ≈ 1/16″)
V(BR)R
IR
LS
12
—
—
— — Vdc
— 0.1 µAdc
5.0 — nH
Case Capacitance
(f = 1.0 MHz, Lead Length ≈ 1/16″)
CC
— 0.25 —
pF
Device
MV1403
MV1404
MV1405
CT, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
140 175 210
96 120 144
200 250 300
Q, Figure of Merit
VR = 2.0 Vdc,
f = 1.0 MHz
Min
200
200
200
TR, Tuning Ratio
C1/C10
f = 1.0 MHz
C2/C10
f = 1.0 MHz
Min Min
— 10
— 10
— 10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–157
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MV1404.PDF ] | |
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