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PDF MV1650 Data sheet ( Hoja de datos )
| Número de pieza | MV1650 | |
| Descripción | Silicon Tuning Diodes | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
These epitaxial passivated tuning diodes are designed for AFC applications in
radio, TV, and general electronic–tuning.
• Maximum Working Voltage of 20 V
• Excellent Q Factor at High Frequencies
• Solid–State Reliability to Replace Mechanical Tuning Methods
Order this document
by MV1626/D
MV1626 thru
MV1650
6.8 – 100 pF
20 VOLTS
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
Anode
1
Cathode
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VR
IF
PD
Value
20
250
400
2.67
Unit
Vdc
mAdc
mW
mW/°C
1
CASE 51–02
DO–204AA (DO–7)
Junction Temperature
TJ +175 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc, TA = 25°C)
Series Inductance
(f = 250 MHz, Lead Length ≈ 1/16″)
V(BR)R
IR
LS
20
—
—
— — Vdc
— 0.10 µAdc
4.0 — nH
Case Capacitance
(f = 1.0 MHz, Lead Length ≈ 1/16″)
CC
— 0.17 —
pF
Device
MV1626
MV1628
MV1630
MV1634
MV1638
MV1648
MV1650
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
10.8 12.0 13.2
13.5 15.0 16.5
16.2 18.0 19.8
19.8 22.0 24.2
29.7 33.0 36.3
73.8 82.0 90.2
90.0
100.0
110.0
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Typ
300
250
250
250
200
150
150
TR, Tuning Ratio
C2/C20
f = 1.0 MHz
Min Max
2.0 3.2
2.0 3.2
2.0 3.2
2.0 3.2
2.0 3.2
2.0 3.2
2.0 3.2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MV1650.PDF ] | |
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