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PDF BC413 Data sheet ( Hoja de datos )
| Número de pieza | BC413 | |
| Descripción | LOW NOISE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BC413
BC414
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
LOW NOISE TRANSISTORS
NPN SILICON
Refer to BC549 for graphs.
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
"C
PD
pd
Tj, T stg
Symbol
Rfcuc
R»JC
BC BC
413 414
30 45
45 50
5.0
100
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Min. | Typ. | Max. | Unit
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ib = 0) BC413
BC414
Collector-Base Breakdown Voltage
(IC = 10 nAdc, l£ = 0) BC413
BC414
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, lc = 0)
V(BR)CE0
V(BR)CB0
V(BR)EB0
30
45
45
50
5
Vdc
Vdc
Vdc
Collector Cutoff Current
(VcB = 30 Vdc, Ie = 0)
(Vcb = 30 Vdc, Ie = 0, Ta = + 125 °C)
Emitter Cutoff Current
(Veb = 4 Vdc, lc = 0)
ON CHARACTERISTICS
ICBO
lEBO
15 nAdc
5 uAdc
nAdc
15
DC Current Gain
(IC = 1 uAdc, Vce = 5 Vdc)
(IC = 2 mAdc, Vce = 5 Vdc)
BC41 3B/BC41 4B
BC413C/BC414C
BC41 3B/BC41 4B
BC413C/BC414C
BC413/BC414
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 0.5 mAdc)
(IC = 10 mAdc, Ib = see note 1)
(IC = 100 mAdc, Ib = 5 mAdc, see note 2)
Base-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5 mAdc)
Base-Emitter On Voltage
dC = 10 |iAdc, Vce = 5 Vdc)
(IC = 100 uAdc, Vce = 5 Vdc)
dC = 2 mAdc, Vce = 5 Vdc)
SMALL SIGNAL CHARACTERISTICS
hFE
v CE(sat)
v BE(sat)
v BE(on)
100
100
180
380
180
0.55
150
270
290
500
350
0.075
0.3
0.25
1.1
0.52
0.55
0.62
460
800
800
0.25
0.6
0.6
0.75
Vdc
Vdc
Vdc
Current-Gain-Bandwidth Product
(IC = 10 mAdc, Vce = 5 Vdc, f = 100 MHz)
fT MHz
250
Collector-Base Capacitance
(Vce = 1 o vdc, ie = o, f = 1 MHz)
mANote 1 : Ib is value for which lc = 11
at Vce = 1 V
C-cbo
pF
2.5
Note 2: Pulse test = 300 us - Duty cycle = 2%
2-88
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC413.PDF ] | |
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