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PDF MPSA56 Data sheet ( Hoja de datos )
| Número de pieza | MPSA56 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MPSA56
-0.5A , -80V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
TO-92
AD
B
E CF
2
Base
Collector
3
1
Emitter
GH
1Emitter
2Base
3Collector
J
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
VCBO
VCEO
VEBO
IC
-80
-80
-4
-0.5
Collector Power Dissipation
PC 625
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
RθJA
TJ, TSTG
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage
V(BR)CBO
-80
-
-
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
-80
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
-4
-
-
V
Collector Cut-Off Current
ICBO - - -0.1 µA
Collector Cut-Off Current
ICEO - - -0.1 µA
Emitter Cut-Off Current
IEBO - - -0.1 µA
DC Current Gain
hFE (1)
hFE (2)
100 -
100 -
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
- -0.25
V
Base to Emitter Voltage
VBE(sat) - - -1.2 V
Transition Frequency
fT
50 -
- MHz
Test Condition
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -100µA, IC=0
VCB= -80V, IE=0
VCE= -60V, IB=0
VEB= -4V, IC=0
VCE= -1V, IC= -10mA
VCE= -1V, IC= -100mA
IC= -100mA, IB= -10mA
IC= -100mA, VCE= -1V
VCE= -1V, IC= -100mA,
f=100MHz
http://www.SeCoSGmbH.com/
9-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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