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PDF BDC08 Data sheet ( Hoja de datos )

Número de pieza BDC08
Descripción HIGH VOLTAGE TRANSISTORS
Fabricantes Motorola Semiconductors 
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No Preview Available ! BDC08 Hoja de datos, Descripción, Manual

BDC06
BDC08
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
HIGH VOLTAGE TRANSISTORS
PNP SILICON
Refer to MPSW92 for graphs.
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T s tg
Symbol
Rejc
R#jc
BDC BDC
06 08
300 250
300 250
5.0
500
1
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Symbol
||
Collector-Emitter Breakdown Voltage (1)
dC = 1 mAdc, Ib = 0)
BDC06
BDC08
V(BR)CE0
Collector-Base Breakdown Voltage
dC = 100 uAdc, Ie = 0)
BDC06
BDC08
V(BR)CB0
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, Ic = 0)
BDC06
BDC08
V(BR)EBO
Collector Cutoff Current
(VcB = 200 Vdc, Ie = 0)
BDC06
BDC08
ICBO
Emitter Cutoff Current
(Vbe = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
BDC06
BDC08
lEBO
DC Current Gain
(IC = 25 mA, VcE = 20 Vdc)
BDC06
BDC08
hFE
Collector-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 20 mA, Ib = 2.0 mA)
DYNAMIC CHARACTERISTICS
VBE(sat)
Current Gain-Bandwidth Product
(IC = 1 mAdc, VcE = 1 Vdc, f = 50 MHz)
fT
Collector-Base Capacitance
(Vcb = 30 Vdc, Ie = 0, f = 1 .0 MHz)
(1) Pulse Test: Pulse Width S 300 us. Duty Cycle S 2.0%
Cre
Min.
300
250
300
250
5.0
5.0
40
50
60
| Max.
0.01
10
2
2.0
2.8
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
Vdc
Vdc
MHz
PF
2-150

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