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PDF 2N3506 Data sheet ( Hoja de datos )
| Número de pieza | 2N3506 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°c
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol 2N3506 2N3S07
VCEO
VCBO
VEBO
ic
40 50
60 80
5.0
3.0
PD 1.0
5.71
Pd 5.0
28.6
TJ- Tstg
-65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Rfljc
R<UA
Max
0.175
35
Unit
°C/mW
°C/W
2N3506
2N3507
JAN, JTX, JTXV AVAILABLE
CASE 79, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO)
dp = 10 mAdc, pulsed, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 /iAdc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 10 jxAdc, Ic = 0)
Collector Cutoff Current
(VC E = 40 Vdc, VEB (off) = 4.0 Vdc)
(VCE = 40 Vdc, VEB ( ff) = 4.0 Vdc, TA = 100°C)
(VCE = 60 Vdc, VEB (off) = 4.0 Vdc)
(VCE = 60 Vdc, VE B(off) = 4.0 Vdc, TA = 100°C)
Base Cutoff Current
(VCE = 40 Vdc, VEB (off) = 40 Vdc)
(VCE = 60 Vdc, VEB(off) = 40 Vdc)
ON CHARACTERISTICS
2N3506
2N3507
2N3506
2N3507
2N3506
2N3506
2N3507
DC Current Gain(1)
dC = 500 mAdc, VqE = 1.0 Vdc)
dC = 1.5Adc,VCE 2.0 Vdc)
C(I = 2.5 Adc, VCE 3.0 Vdc)
C(l = 3.0 Adc, VCE 5.0 Vdc)
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
Collector-Emitter Saturation Voltaged)
dc = 500 mAdc, Bl = 50 mAdc)
c(l = 1.5 Adc, Ib = 150 mAdc)
dC = 2.5 Adc, Ib = 250 mAdc)
Base-Emitter Saturation Voltaged)
dc = 500 mAdc, Bl = 50 mAdc)
dC = 1.5 Adc, Bl = 150 mAdc)
dC = 2.5 Adc, Ib = 250 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product dc = 100 mAdc, VcE = 5 Vdc, f = 20 MHz)
Output Capacitance
(VcB
=
10
vdc
-
'E
=
°- f
=
10° kHz >
Input Capacitance (Vbe = 3 Vdc, Ic = 0, f = 100 kHz)
Symbol
v (BR)CEO
V(BR)CBQ
v (BR)EBO
'CEX
IBL
hFE
v CE(sat)
VBE(sat)
Cpbo
Cjbo
Min
40
50
60
80
50
35
40
30
30
25
25
20
Unit
Vdc
Vdc
1.0
150
1.0
150
1.0
1.0
/xAdc
/uAdc
200
150
0.5 Vdc
1.0
1.5
1.0 Vdc
1.4
2.0
40 pF
300 pF
4-99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3506.PDF ] | |
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