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부품번호 | 2N3506 기능 |
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기능 | NPN MEDIUM POWER SILICON TRANSISTOR | ||
제조업체 | Microsemi | ||
로고 | |||
전체 6 페이지수
2N3506 thru 2N3507A
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
DESCRIPTION
This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature
low saturation voltage. These devices are also available in TO-5 and low profile U4
packaging. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
Qualified Levels:
JAN, JANTX and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3506 through 2N3507A series.
• RoHS compliant versions available (commercial grade only).
• VCR(sat) = 0.5 V @ IC = 500 mA.
• Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
• Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long-leaded)
2N3506L – 2N3507AL
U4 package
(surface mount)
2N3506U4 – 2N3507AU4
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Collector Current
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +110 °C (2)
Operating & Storage Junction Temperature Range
Symbol
V CEO
V CBO
V EBO
R ӨJA
R ӨJC
IC
PD
TJ, Tstg
2N3506 2N3507
40 50
60 80
5.0
175
18
3.0
1.0
5.0
-65 to +200
Notes: 1. Derate linearly 5.71 mW/°C for TA > +25 °C.
2. Derate linearly 55.5 mW/°C for TC > +110 °C.
Unit
V
V
V
oC/W
oC/W
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0016, Rev. 2 (111682)
©2011 Microsemi Corporation
Page 1 of 6
2N3506 thru 2N3507A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
IC = 100 mA, VCE = 5 V, f = 20 MHz
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 3.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS (2)
Parameters / Test Conditions
Delay Time
IC = 1.5 A, IB1 = 150 mA
Rise Time
IC = 1.5 A, IB1 = 150 mA
Storage Time
IC = 1.5 A, IB1 = IB2 = 150 mA
Fall Time
IC = 1.5 A, IB1 = IB2 = 150 mA
Symbol Min. Max.
|hfe| 3.0 15
C obo
C ibo
40
300
Symbol
td
Min.
Max.
15
tr 30
ts 55
tf 35
Unit
pF
pF
Unit
ns
ns
ns
ns
(2) Consult MIL-PRF-19500/349 for additional infornation.
T4-LDS-0016, Rev. 2 (111682)
©2011 Microsemi Corporation
Page 4 of 6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 2N3506.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2N3500 | Type 2N3500 Geometry 5620 Polarity NPN | Semicoa Semiconductor |
2N3500 | GENERAL PURPOSE TRANSISTOR (NPN SILICON) | Boca Semiconductor Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |