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Datasheet 2N3636 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | 2N3636 | HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T/ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
2N3634 2N3636 |
Motorola Semiconductors |
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8 | 2N3636 | Bipolar PNP Device 2N3636
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
Seme LAB |
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7 | 2N3636 | PNP SILICON PLANAR RF TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR RF TRANSISTORS
2N3635 2N3636 2N3637
TO-39 Metal Can Package
2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.
ABSOLUTE MAXIMUM RATINGS (Ta= |
CDIL |
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6 | 2N3636 | GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
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Número de pieza | Descripción | Fabricantes | |
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