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PDF 2N5320 Data sheet ( Hoja de datos )

Número de pieza 2N5320
Descripción SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Fabricantes TT 
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No Preview Available ! 2N5320 Hoja de datos, Descripción, Manual

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A)
Hermetic TO-39 Metal package.
Ideally Suited For Medium Power Amplifier And
Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
75V
VEBO
Emitter – Base Voltage
7V
IC Continuous Collector Current
2A
IB Base Current
1.0A
PD Total Power Dissipation at TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
PD Total Power Dissipation at TC = 25°C
7W
Derate Above 25°C
40mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
175 °C/W
25 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
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