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PDF 2N4037 Data sheet ( Hoja de datos )
| Número de pieza | 2N4037 | |
| Descripción | PNP SILICON PLANAR EXPITAXIAL TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EXPITAXIAL TRANSISTOR.
2N4037
TO-39
Metal Can Package
MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO(sus) *
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Base Current
IB
Continuous Power Dissipation
PD
@ or Below Ta=25ºC
Linear Derating Dissipation
Operating And Storage Junction
Tj, Tstg
Temperature Range
* Must not be tested on a curve tracer.
VALUE
40
60
7.0
1.0
0.5
1.0
5.72
-65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter susstaining Voltage V(BR)CEO(sus)
IC=100mA,IB=0
Collector Base Breakdown Voltage
V(BR)CBO
IC=100µA,IE=0
Collector Cut off Current
ICBO
VCB=60V, IE=0
Emitter Cut off Current
IEBO
VBE=5V, IC=0
DC Current Gain
hFE IC=1mA,VCE=10V
IC=150mA,VCE=10V
Collector Emitter (sat) Voltage
VCE(Sat)
IC=150mA,IB=15mA
Base Emitter Voltage
VBE(0n)
IC=150mA,VCE=10V
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Capacitance
Current Gain -High Frequency
Ccb
| hfe |
VCB= 10V, f=20MHz
IC =50mA, VCE=10V,
f=20MHz
VALUE
>40
>60
<250
<20
>15
50-250
<1.4
<1.5
VALUE
<30
3.0-1.0
UNITS
V
V
V
A
A
W
mW/ºC
ºC
UNITS
V
V
nA
nA
V
V
UNITS
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N4037.PDF ] | |
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