Datasheet BZX84C3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BZX84C3	SURFACE MOUNT SILICON ZENER DIODES BZX84C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 410 mWatt FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU dire	Pan Jit International	diode
2	BZX84C3	350mW SURFACE MOUNT ZENER DIODE	Won-Top Electronics	diode
3	BZX84C3	Silicon 410 mWatt Zener Diodes MCC Features l l l l omponents 21201 Itasca Street Chatsworth !"# $ % !"# BZX84C2V4 THRU BZX84C39 Silicon 410 mWatt Zener Diodes Planar Die construction 410mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automate	Micro Commercial Components	diode
4	BZX84C3	SURFACE MOUNT ZENER DIODES/SOT-23	Jinan Gude Electronic Device	diode
5	BZX84C3	Zener Diode, Rectifier ( SMD ) CE CHENYI ELECTRONICS BZX84C-SERIES SURFACE MOUNT ZENER DIODES 350mW Part No. BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10 BZX84C11 BZX84C12 BZX84C13 BZX84C15 BZX84C16 BZX84C18 BZX84C20 BZX84C22 B	Shanghai Lunsure Electronic Tech	diode
6	BZX84C30	Zener Diodes MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes BZX84C2V4	MCC	diode
7	BZX84C30	Zener Diode, Rectifier SEMICONDUCTOR TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES Small Package : SOT-23 Normal Voltage Tolerance About 2.5%. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation Junction Temperature Storage Temperature Range PD*	KEC	diode
8	BZX84C30	SILIICON PLANAR VOLTAGE REGULATOR DIODE Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODE 3 2 1 3 Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE 12 BZX84C2V4 to 75V SOT-23 Formed SMD Package Low voltage general purpose voltage regulator diode ABSOLUTE	CDIL	diode
9	BZX84C30	Surface Mount Zener Diode Small Signal Product BZX84C2V4 thru BZX84C39 Taiwan Semiconductor Surface Mount Zener Diode FEATURES - Zener voltages from : 2.4V - 39V - Planar die construction - Ideally suited for automated assembly processes - Moisture sensitivity : Level 1 per J-STD-020 MECHANICAL DATA - Case : SOT-23, mold	Taiwan Semiconductor	diode

BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BZX10	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
2	BZX10	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
3	BZX11	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
4	BZX11	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
5	BZX12	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
6	BZX12	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
7	BZX13	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
8	BZX13	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
9	BZX15	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode

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Número de pieza	Descripción	Fabricantes	PDF
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