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SMBJ8.0C 데이터시트 PDF




DEC에서 제조한 전자 부품 SMBJ8.0C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 SMBJ8.0C 자료 제공

부품번호 SMBJ8.0C 기능
기능 TVS Diode ( Rectifier )
제조업체 DEC
로고 DEC 로고


SMBJ8.0C 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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SMBJ8.0C 데이터시트, 핀배열, 회로
SMBJ5.0 THRU SMBJ188CA
Features
· Underwriters Laboratory recognition under UL standard
for safety 497B : Isolated loop curcuit protection
· Low profile package with built-in strain relief for surface
mounted applications
· Glass passivated junction
· Low incremental surge resistance, excellent clamping
capability
· 600W peak pulse power capability with a 10/1000 S
waveform, repetition rate(duty cycle) : 0.01%
· Very fast response time
· High temperature soldering guaranteed : 250 /10 seconds
at terminals
Mechanical Data
· Case : JEDEC DO-214AA(SMB) molded plastic
over passivated chip
· Terminals : Solder plated , solderable per
MIL-STD-750, method 2026
· Polarity : For uni-directional types the band denotes
the cathode, which is positive with respect to the
anode under normal TVS operation
· Mounting Position : Any
· Weight : 0.003 ounce, 0.093 gram
POWER 600Watts
VOLTAGE 5.0 to 188 Volts
DO-214AA (SMB)
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.096(2.44)
0.083(2.13)
0.012(0.31)
0.006(0.15)
0.050(1.27)
0.030(0.76)
0.008(0.203)
MAX.
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeters)
Devices For Bidirectional Applications
· For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA).
Electrical characteristics apply in both directions.
Maximum Ratings And Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified)
Peak pulse power dissipation with a 10/1000 S waveform (Note 1,2. Fig. 1)
Peak pulse current with a waveform (Note 1)
Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 2)
Typical thermal resistance, junction to ambient (Note 3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Notes:
(1) Non repetitive current pulse, per Fig.3 and derated above TA=25
(2) Mounted on 0.2 0.2"(5.0 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
per Fig.2
Symbols
PPPM
IPPM
IFSM
R JA
R JL
TJ,TSTG
Values
Minimum 600
See next table
100
100
20
-55 to +150
Units
Watts
Amps
Amps
/W
/W




SMBJ8.0C pdf, 반도체, 판매, 대치품
RATINGS AND CHARACTERISTIC CURVES SMBJ5.0 THRU SMBJ188CA
Fig. 1ÐP eak P uls e Power R ating C urve
100
Fig. 2Ð P uls e Derating C ur ve
100
10
1
0.2 x 0.2" (0.5 x 0.5mm)
C opper P ad Areas
0.1
0.1 s
1.0 s
10 s
100
1 . 0 ms
td , P uls e W idth (s ec.)
10ms
Fig. 3Ð P uls e Waveform
150
tr = 10 s
T J = 25 oC
P uls e Width (td)
is defined as the point
P eak Value
where the peak current
IP P M
100
decays to 50% of IP P M
Half Value IP P
IP P M
2
50 10/1000 s W aveform
as defined by R .E .A.
td
0
0 1.0 2.0 3.0 4.0
t , Time (ms )
F ig. 5ÐT ypic al Trans ient T hermal
Impedance
100
10
75
50
25
0
0 25 50 75 100 125 150 175 200
T A , Ambient Temperature ( C )
Fig. 4ÐT ypical J unction C apacitance
6,000
Measured at
Zero B ias
1,000
V R , Meas ured at
100 S tand-Off
Voltage, V WM
U ni-D ire c tiona l
B i-Directional
10
1 10
T J = 25 oC
f = 1.0MHz
V s ig = 50mV p-p
100 200
V WM , R evers e S tand-Off Voltage (V )
Fig. 6Ð Maximum Non-R epetitive P eak
F orward S ugr e C urrent
200
8.3ms S ingle Half S ine-Wave
(J E DE C Method)
Unidirectional Only
100
1.0
0.1
0.001
0.01 0.1 1 10 100
tp , P uls e Duration (s ec)
1000
10
1 10
100
Number of C ycles at 60HZ

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