BD638 Datasheet PDF - Inchange Semiconductor
| Part Number | BD638 | |
| Description | Silicon PNP Power Transistor | |
| Manufacturers | Inchange Semiconductor | |
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There is a preview and BD638 download ( pdf file ) link at the bottom of this page. Total 2 Pages | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD638
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type BD637
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-2 A
ICM Collector Current-Peak
-5 A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.3 A
2
W
30
150 ℃
-55~150
℃
isc Website：www.iscsemi.cn
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BD638 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BD638.PDF Datasheet ] | |
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