2N5781 Datasheet PDF - Central Semiconductor
| Part Number | 2N5781 | |
| Description | COMPLEMENTARY SILICON POWER TRANSISTOR | |
| Manufacturers | Central Semiconductor | |
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2N5781 PNP
2N5784 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5781 and
2N5784 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
ΘJC
ΘJA
80
80
65
5.0
3.5
1.0
10
1.0
-65 to +200
17.5
175
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=75V, VBE=1.5V
ICEV
VCE=75V, VBE=1.5V, TC=150°C
ICER
VCE=65V, RBE=100Ω
ICER
VCE=65V, RBE=100Ω, TC=150°C
ICEO
VCE=50V
IEBO
VEB=5.0V
BVCER
IC=10mA, RBE=100Ω
80
BVCEO
IC=10mA
65
VCE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE=2.0V, IC=1.0A
hFE VCE=2.0V, IC=1.0A
20
hFE VCE=2.0V, IC=3.2A
4.0
fT VCE=2.0V, IC=100mA, f=4.0MHz (2N5781) 8.0
fT VCE=2.0V, IC=100mA, f=200kHz (2N5784) 1.0
hfe VCE=2.0V, IC=100mA, f=1.0kHz
25
ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5781)
ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784)
toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5781)
toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784)
MAX
10
1.0
10
1.0
100
10
0.5
1.5
150
60
4.0
0.5
5.0
2.5
15
UNITS
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
mA
μA
mA
μA
μA
V
V
V
V
MHz
MHz
μs
μs
μs
μs
R1 (25-January 2011)
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N5781 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N5781.PDF Datasheet ] | |
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| 2N5781 | The function is COMPLEMENTARY SILICON POWER TRANSISTOR. Central Semiconductor | |
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