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L93C46 데이터시트 PDF




LIZE에서 제조한 전자 부품 L93C46은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 L93C46 기능
기능 1024 bits EEPROM
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L93C46 데이터시트, 핀배열, 회로
Shenzhen LIZE Electronic Technology Co., Ltd
SPECIFICATION
L 3C46
Version 1.1
reserves the right to change this documentation without prior notice.
Shenzhen LIZE Electronic Technology Co., Ltd
Version: 1.1
Date: 13, Sep. 2007
Page: 1 of 11




L93C46 pdf, 반도체, 판매, 대치품
Tel:86-755-8835 3502/03/04
Website:http://www.lizhiic.com
Fax:86-755-8835 3509
Electrical Characteristics
Absolute Maximum Ratings*
DC Supply Voltage . . . . . . . . . . . . . . . . .-0.3V to +6.5V
Input / Output Voltage . . . . . . . GND-0.3V to Vcc+0.3V
Operating Ambient Temperature . . . . . -40C to +85C
Storage Temperature . . . . . . . . . . . . -65C to +150C
*NOTICE:
Stresses above those listed under "Absolute Maximum Ratings"
may cause permanent damage to this device. These are stress
ratings only. Functional operation of this device at these or any
other conditions above those indicated in the operational sections
of this specification is not implied or intended. Exposure to the
absolute maximum rating conditions for extended periods may
affect device reliability.
Table 2.Pin Capacitance (1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V (unless otherwise noted)
Symbol
Test Conditions
Max Unit
Conditions
COUT
Output Capacitance (DO)
5 pF VOUT = 0V
CIN
Input Capacitance (CS, SK, DI)
5
pF
VIN = 0V
Table 3 . DC Characteristics
Applicable over recommended operating range from: TA = −40°C to +85°C, VCC = +1.8V to +5.5V, (unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Units
VCC1 Supply Voltage
-
1.8 - 5.5 V
VCC2 Supply Voltage
-
2.7 - 5.5 V
VCC3 Supply Voltage
-
4.5 - 5.5 V
Read at 1.0 MHz
-
0.2 2.0
mA
ICC
Supply Current
VCC = 5.0V
Write at 1.0 MHz
-
0.9 3.0
mA
ISB1
Standby Current
VCC = 1.8V
CS = 0V
- - 1.0 µA
ISB2
Standby Current
VCC = 2.7V
CS = 0V
- - 1.0 µA
ISB3
Standby Current
VCC = 5.0V
CS = 0V
- - 1.0 µA
IIL(1) Input Leakage
VIN = 0V to VCC
- 0.1 1.0 µA
IIL(2) Input Leakage
VIN = 0V to VCC
- 2.0 3.0 µA
IOL Output Leakage
VIN = 0V to VCC
- 0.1 1.0 µA
VIL1(3)
VIH1(3)
Input Low Voltage
Input High Voltage
2.7V ≤ VCC ≤ 5.5V
-0.3 -
0.8
2.0 - VCC + 0.3 V
VIL2(3)
VIH2(3)
Input Low Voltage
Input High Voltage
1.8V ≤ VCC ≤ 2.7V
-0.3 - VCC + 0.3
VCC x 0.7 - VCC + 0.3 V
VOL1 Output Low Voltage
IOL = 2.1mA
2.7V ≤ VCC ≤ 5.5V
- - 0.4 V
VOH1 Output High Voltage
IOH = -0.4mA 2.4 -
V
VOL2 Output Low Voltage
IOL = 0.15mA - - 0.2 V
1.8V ≤ VCC ≤ 2.7V
VOH2 Output High Voltage
IOH = -100µA
VCC-0.2
-
-
V
Notes: 1. DICSSK input pin
2. ORG input pin
3. VIL min and VIH max are reference only and are not tested.
Shenzhen LIZE Electronic Technology Co., Ltd
Version: 1.1
Date: 13, Sep. 2007
Page: 4 of 11

4페이지










L93C46 전자부품, 판매, 대치품
Tel:86-755-8835 3502/03/04
Website:http://www.lizhiic.com
Fax:86-755-8835 3509
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns
specified in the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept
low for a minimum of 250 ns (TCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be executed after all programming operations. The operation of
the Read instruction is independent of both the EWEN and EWDS instructions and can be executed at any time.
Timing Diagrams
Figure 2: Synchronous Data Timing
CS
VIH
VIL
SK
VIH
VIL
tCSS
tSKH
1 µs(1)
DI
VIH
VIL
DO (READ)
VOH
VOL
DO (PROGRAM)
VOH
VOL
tDIS
tDIH
tPD0
tSV
Note: 1. This is the minimum SK period.
tSKL
tPD1
STATUS VALID
tCSH
tDF
tDF
Table 6. Organization Key for Timing Diagrams
I/O
X 16
AN A5
DN D15
Figure 3: READ Timing
CS
SK
DI
11
O AN
AO
High Impedance
DO
O DN
L93C46(1K)
X8
A6
D7
tCS
DO
Shenzhen LIZE Electronic Technology Co., Ltd
Version: 1.1
Date: 13, Sep. 2007
Page: 7 of 11

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L93C46

1024 bits EEPROM

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