|
|
Número de pieza | BCW60C | |
Descripción | NPN Transistor | |
Fabricantes | RECTRON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCW60C (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
BCW60C
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.1 A
* Collector-base voltage
V(BR)CBO : 32
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 10mA, IE=0)
SYMBOL
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 10mA, IC=0)
Collector cut-off current (VCB= 32V, IE=0)
V(BR)CEO
V(BR)EBO
ICBO
Collector cut-off current (VEB= 4V, IC=0)
IEBO
DC current gain (VCE= 5V, IC= 10mA)
DC current gain (VCE= 5V, IC= 2mA)
DC current gain (VCE= 5V, IC= 50mA)
hFE
Collector-emitter saturation voltage (IC= 10mA, IB= 0.25mA)
Collector-emitter saturation voltage (IC= 50mA, IB= 1.25mA)
VCE(sat)
Base-emitter saturation voltage (IC= 10mA, IB= 0.25mA)
Base-emitter saturation voltage (IC= 50mA, IB= 1.25mA)
Base-emitter voltage (VCE= 5V, IC= 2mA)
Transition frequency (VCE= 5V, IC= 10mA, f=100MHZ)
Output capacitance (VCB= 10V, IE= 0, f=1MHZ)
VBE(sat)
VBE
fT
Cob
Marking
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN TYP
32 -
32 -
5-
--
--
40 -
250 -
100 -
--
--
--
--
0.55 -
100 -
--
AC
MAX
-
-
-
0.02
0.02
-
460
-
0.35
0.55
0.85
1.05
0.75
-
5
UNITS
V
V
V
mA
mA
-
-
-
V
V
V
V
V
MHZ
pF
2006-3
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BCW60C.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCW60 | NPN general purpose transistors | NXP Semiconductors |
BCW60 | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | Siemens Semiconductor Group |
BCW60 | NPN Silicon AF Transistors | Infineon Technologies AG |
BCW60 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |