Datasheet BCW60D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BCW60D	GENERAL PURPOSE TRANSISTOR BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total De	Motorola Semiconductors	transistor
2	BCW60D	Small Signal Transistors BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout	Vishay	transistor
3	BCW60D	Surface Mount General Purpose Si-Epi-Planar Transistors BCW60A ... BCW60D BCW60A ... BCW60D NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-31 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 2.5 max 1.3±0.1 Plastic case Kunststo	Diotec	transistor
4	BCW60D	NPN EPITAXIAL SILICON TRANSISTOR	Samsung semiconductor	transistor
5	BCW60D	NPN general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product speciﬁcation Supersedes data of 1997 Mar 10 1999 Apr 22 Philips Semiconductors Product speciﬁcation NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low v	NXP Semiconductors	transistor

BCW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BCW29	EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current	KEC	transistor
2	BCW29	PNP General Purpose Transistors SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle	Kexin	transistor
3	BCW29	Silicon Planar Epitaxial Transistor	Philips	transistor
4	BCW29	GENERAL PURPOSE TRANSISTOR BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device	Motorola Semiconductors	transistor
5	BCW29	SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2	CDIL	transistor
6	BCW29	PNP general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product speciﬁcation Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product speciﬁcation PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low v	NXP Semiconductors	transistor
7	BCW29	Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlus	Diotec Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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