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PDF MXR3866 Data sheet ( Hoja de datos )
| Número de pieza | MXR3866 | |
| Descripción | RF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MXR3866
CASE 345-01, STYLE 1
SOT-89
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
ic
Tj, Tstg
Value
30
55
3.5
0.4
- 55 to + 1 50
Unit
V
V
V
A
°C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T/\ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
T stg
*Thermal Resistance Junction to Ambient
R 0JA
•Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Max
1.0
8.0
150
125
Unit
Watt
mW/X
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 5.0 mA, Rbe = 10 il)
Collector-Emitter Sustaining Voltage
dC = 5.0 mA)
Collector-Base Breakdown Voltage
dC = 0.1 mA)
Emitter-Base Breakdown Voltage
(IE = 0.1 mA)
Collector Cutoff Current
(VC E = 28 V)
Collector Cutoff Current
(VC E = 55 V, V BE = 1.5 V)
ON CHARACTERISTICS
DC Current Gain
dC = 0.36 A, Vce = 5.0 V)
dC = 0.05 A, VCE = 5.0 V)
Collector-Emitter Saturation Voltage
dC = 100 mA, Ib = 20 mA)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mA, Vce = 15 V, f = 200 MHz)
Output Capacitance
(Vcb = 30 V, f = 1.0 MHz)
Symbol
V(BR)CER
VCEO(sus)
V(BR)CBO
V(BR)EBO
!CEO
ICEX
Min
55
30
55
3.5
—
—
hFE
VcE(sat)
5.0
10
—
fT
Cobo
500
—
Max
—
—
—
—
20
100
200
1.0
—
3.0
Unit
V
V
V
V
ma
/uA
—
V
MHz
pF
3-120
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MXR3866.PDF ] | |
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