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PDF BCX17 Data sheet ( Hoja de datos )
| Número de pieza | BCX17 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BCX17,18
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
vEBO
Value
BCX17 BCX18
45 25
50 30
5.0
500
Unit
Vdc
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R £UA
mm'Package mounted on 99.5% alumina 10 x 8 x 0.6
Max
350
2.8
150
357
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
flC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
Oc = 10 ,uAdc, lc = 0)
Collector Cutoff Current
(VC B = 20 Vdc, El = 0)
(Vqb = 20 Vdc, Ig = 0, TA = 150°C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, Ig = 0)
ON CHARACTERISTICS
BCX17
BCX18
BCX17
BCX18
DC Current Gain
Oc = 100 mAdc, Vce = 1.0 Vdc)
Oc = 300 mAdc, Vce = 1-0 Vdc)
Oc = 500 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
Oc = 500 mAdc, Ib = 50 mAdc)
Base-Emitter On Voltage
OC = 500 mAdc, Vce = 10 Vdc)
Symbol
v(BR)CEO
V (BR)CES
'CBO
!eBO
"FE
v CE(sat)
v BE(on)
Min
100
70
40
-
—
Typ Max
Vdc
Vdc
100 nAdc
5.0 /iAdc
10 /uAdc
—
- 600
- 0.62
Vdc
— 1.2 Vdc
3-20
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BCX17.PDF ] | |
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